Intelligent Word Programming - Freescale Semiconductor 56F800 User Manual

6.10.1 Intelligent Word Programming

Assuming the word in question has already been erased, a single 16-bit word may be
programmed through the following method:
1. Start with the Flash in either Standby or Read modes. Read FIU_CNTL register to insure
this is true. All bits should be clear with the exception of IFREN when programming the
Information Block. Please refer to
2. Enable programming by setting the Intelligent Program Enable (IPE) bit and row number
in the FIU_PE register. To calculate the row number, use the following algorithm:
— Target_Address is the logical AND operation of $7FFF divided by $20 = ROW
— Put differently, set the MSB of the target address to zero and right shift the result five
places
3. Set the IE[8] bit in the FIU_IE register enabling to t
completion of programming.
4. Write the value desired to the proper word in the Flash Memory Map. Note a single
location in the Flash may map to different locations in the Memory Map based upon the
mode selected on startup. The FIU will adjust accordingly. This write to the Flash memory
map while the IPE bit is set will start the internal state machine to run the Flash through its
programming paces.
5. Do not attempt to access the Flash again until the BUSY signal clears in the FIU_CNTL
register, corresponding to the t
6. When programming is completed, be certain to clear the IPE bit in the FIU_PE register.
The Intelligent Programming feature can program only one word at a time. Multiple words may
be programmed by repeating the process, or by switching to the Dumb Word Programming
method, subsequently outlined.
Freescale Semiconductor
Section 6.9.
interrupt when enabled.
RCV
Flash Memory Interface (FLASH), Rev. 3
Flash Programming and Erase Models
interrupt if desired to flag
RCV
11