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OSC3 oscillator circuit characteristics
Unless otherwise specified: V
DD
Item
Symbol
Crystal/ceramic oscillation
t
sta3C
start time
Crystal/ceramic oscillator
C
GI3C
internal gate capacitance
Crystal/ceramic oscillator
C
DI3C
internal drain capacitance
Internal oscillator
t
sta3I
oscillation start time
Internal oscillator
f
OSC3I
oscillation frequency
OSC3 internal oscillation frequency-temperature characteristic
V
= 2.0 to 5.5 V, Typ. value
DD
35
CLGOSC3.OSC3FQ[2:0] bits = 0x7
30
25
20
15
10
5
0
-50
-25
0
25
EXOSC external clock input characteristics
Unless otherwise specified: V
DD
Item
EXOSC external clock duty ratio
High level Schmitt input threshold voltage V
Low level Schmitt input threshold voltage
Schmitt input hysteresis voltage
V
T+
EXOSC
23.6 Flash Memory Characteristics
Unless otherwise specified: V
DD
Item
Symbol
Programming count
C
*2
FEP
Programming current
I
*3
FLASH
*1 The potential variation of the V
mounting board while the Flash is being programmed, as it affects the Flash memory characteristics (programming count).
*2 Assumed that Erasing + Programming as count of 1. The count includes programming in the factory for shipment with ROM data
programmed.
*3 The value is added to the current consumption in the current operating mode.
S1C31W65 TECHNICAL MANUAL
(Rev. 1.1)
= 1.8 to 5.5 V, V
= 0 V, CLGOSC3.OSC3MD bit = 0, PWGACTL.REGSEL bit = 1, Ta = 25°C
SS
Condition
Crystal resonator,
CLGOSC3.OSC3MD bit = 1
Ceramic resonator,
CLGOSC3.OSC3MD bit = 1
CLGOSC3.OSC3MD bit = 1
CLGOSC3.OSC3MD bit = 1
CLGOSC3.OSC3FQ[2:0] bits = 0x7,
V
= 2.0 to 5.5 V
DD
CLGOSC3.OSC3FQ[2:0] bits = 0x6,
V
= 2.0 to 5.5 V
DD
CLGOSC3.OSC3FQ[2:0] bits = 0x5,
V
= 2.0 to 5.5 V
DD
CLGOSC3.OSC3FQ[2:0] bits = 0x4,
V
= 2.0 to 5.5 V
DD
CLGOSC3.OSC3FQ[2:0] bits = 0x3–0x0,
V
= 2.0 to 5.5 V
DD
0x6
0x5
0x4
0x3
50
75
100
125
Ta [°C]
= 1.8 to 5.5 V, V
= 0 V, Ta = -40 to 105°C
SS
Symbol
t
t
EXOSCD
EXOSCD
T+
V
T-
DV
T
t
= 1/f
EXOSC
EXOSC
t
EXOSCH
V
T+
V
T-
= 2.2 to 5.5 V, V
= 0 V
, Ta = -40 to 85°C
*1
SS
Condition
Programmed data is guaranteed to be retained for 10 years.
voltage should be suppressed to within ±0.3 V on the basis of the ground potential of the MCU
SS
Seiko Epson Corporation
23 ELECTRICAL CHARACTERISTICS
Ta
–
–
–
–
–
25°C
-40 to 105°C
25°C
-40 to 105°C
25°C
-40 to 105°C
25°C
-40 to 105°C
25°C
-40 to 105°C
Condition
= t
/t
EXOSCH
EXOSC
t
EXOSC
t
EXOSCH
V
T+
Min.
Typ.
Max.
–
–
20
–
–
1
–
5
–
–
5
–
–
–
3
31.0
32
33.0
29.1
32
33.3
23.3
24
24.7
21.8
24
26.2
15.5
16
16.5
14.9
16
17.1
11.6
12
12.4
11.3
12
12.7
7.8
8
8.2
7.6
8
8.4
Min.
Typ.
Max.
46
–
54
0.5 × V
–
0.8 × V
DD
0.2 × V
–
0.5 × V
DD
165
–
–
= 1/f
EXOSC
V
T+
V
T-
Min.
Typ.
Max.
1,000
–
–
–
16
33
Unit
ms
ms
pF
pF
µs
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
Unit
%
V
DD
V
DD
mV
Unit
times
mA
23-7
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