Flash Memory Characteristics - Epson S1C17F13 Technical Manual

22 ELECTRICAL CHARACTERISTICS
OSC3B oscillation frequency-temperature characteristic
Typ. value
21
19
17
15
13
11
9
7
-50 -25 0
OSC3A oscillator circuit characteristics
Unless otherwise specified: V
DD
Item
Oscillation start time
Internal gate capacitance
Internal drain capacitance
EXOSC external clock input characteristics
Unless otherwise specified: V
DD
Item
EXOSC external clock duty ratio
High level Schmitt input threshold voltage V
Low level Schmitt input threshold voltage
Schmitt input hysteresis voltage
t
V
T+
EXOSC
22.6

Flash Memory Characteristics

Unless otherwise specified: V
DD
Item
Programming count *1
*1 Assumed that Erasing + Programming as count of 1. The count includes programming in the factory for shipment with ROM data
programmed.
22-6
20 MHz
16 MHz
12 MHz
8 MHz
25 50 75 100
Ta [°C]
= 2.0 to 3.6 V, V = 0 V, Ta = 25 °C
SS
Symbol
t 3A Crystal resonator
sta
Ceramic resonator
C
GI3
C
DI3
= 2.0 to 3.6 V, V = 0 V, Ta = -20 to 70 °C
SS
Symbol
t t
EXOSCD EXOSCD
T+
V
T-
DV
T
t = 1/f
EXOSC EXOSC
EXOSCH
V
T+
V
T-
= 2.0 to 3.6 V, V = 0 V, Ta = -20 to 70 °C
SS
Symbol
C Programmed data is guaranteed to be
FEP
retained for 10 years.
Seiko epson Corporation
Condition
Condition
= t /t
EXOSCH EXOSC
t
EXOSCH
V
T+
Condition
Min. Typ. Max.
– – 20
– – 1
– 5 –
– 5 –
Min. Typ. Max.
46 – 54
0.5 × V – 0.9 × V
DD
0.1 × V – 0.5 × V
DD
180 – –
t = 1/f
EXOSC EXOSC
V
T+
V
T-
Min. Typ. Max.
50 – –
S1C17F13 TeChniCal Manual
Unit
ms
ms
pF
pF
Unit
%
V
DD
V
DD
mV
Unit
times
(Rev. 1.0)