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OSC3 internal oscillation frequency-
temperature characteristic
V
= 1.6 to 3.6 V, Typ. value
DD
4.5
CLGOSC3.OSC3FQ[2:0] bits = 0x3
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
OSC3 CR oscillation frequency-
resistance characteristic
V
= 1.6 to 3.6 V, Ta = 25 °C, Typ. value
DD
10,000
1,000
100
10
1
10
R
EXOSC external clock input characteristics
Unless otherwise specified: V
DD
Item
EXOSC external clock duty ratio
High level Schmitt input threshold voltage V
Low level Schmitt input threshold voltage
Schmitt input hysteresis voltage
V
T+
EXOSC
21.6 Flash Memory Characteristics
Unless otherwise specified: V
DD
Item
Programming count
*1
*1 Assumed that Erasing + Programming as count of 1. The count includes programming in the factory for shipment with ROM data
programmed.
S1C17W12/W13 TECHNICAL MANUAL
(Rev. 1.2)
0x2
0x1
0x0
0x4
0x5
25
50
75
100
Ta [°C]
∆f
/∆IC
OSC3R
100
1,000
10,000
[kΩ]
CR3
= 1.2 to 3.6 V, V
= 0 V, Ta = -40 to 85 °C
SS
Symbol
t
t
= t
EXOSCD
EXOSCD
T+
V
T-
DV
T
t
= 1/f
EXOSC
EXOSC
t
EXOSCH
V
T+
V
T-
= 2.4 to 3.6 V, V
= 0 V, Ta = -40 to 85 °C
SS
Symbol
C
Programmed data is guaranteed to be
FEP
retained for 10 years.
Seiko Epson Corporation
21 ELECTRICAL CHARACTERISTICS
OSC3 internal oscillation frequency-
power supply voltage characteristic
Ta = 25 °C, Typ. value
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
1.5
2.0
Condition
/t
EXOSCH
EXOSC
t
EXOSC
t
EXOSCH
V
T+
V
Condition
CLGOSC3.OSC3FQ[2:0] bits = 0x3
0x2
0x1
0x0
0x4
0x5
2.5
3.0
3.5
V
[V]
DD
Min.
Typ.
Max.
46
–
54
0.5 × V
–
0.8 × V
DD
DD
0.2 × V
–
0.5 × V
DD
DD
120
–
–
= 1/f
EXOSC
V
T+
T-
Min.
Typ.
Max.
1,000
–
–
4.0
Unit
%
V
V
mV
Unit
times
21-7
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