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OSC3 internal oscillation frequency-temperature characteristic
Typ. value
20
18
16
14
12
10
8
6
4
2
0
-50
-25
0
EXOSC external clock input characteristics
Unless otherwise specified: V
DD
Item
EXOSC external clock duty ratio
High level Schmitt input threshold voltage V
Low level Schmitt input threshold voltage
Schmitt input hysteresis voltage
V
T+
EXOSC
19.6 Flash Memory Characteristics
Unless otherwise specified: V
DD
Item
Programming count
*2
*1 The potential variation of the V
mounting board while the Flash is being programmed, as it affects the Flash memory characteristics (programming count).
*2 Assumed that Erasing + Programming as count of 1. The count includes programming in the factory for shipment with ROM data
programmed.
19.7 Input/Output Port (PPORT) Characteristics
Unless otherwise specified: V
DD
Item
Symbol
High level Schmitt input
V
threshold voltage
Low level Schmitt input
V
threshold voltage
Schmitt input hysteresis
DV
voltage
High level output current 1 I
OH1
High level output current 2 I
OH2
Low level output current 1 I
OL1
Low level output current 2 I
OL2
Low level output current 3 I
OL3
Leakage current
I
LEAK
Input pull-up resistance
R
Input pull-down resistance R
Pin capacitance
C
S1C17M12/M13 TECHNICAL MANUAL
(Rev. 1.2)
16 MHz
12 MHz
8 MHz
4 MHz
25
50
75
Ta [°C]
= 1.8 to 5.5 V, V
= V
= 0 V, Ta = -40 to 85 °C
SS
SS2
Symbol
t
t
EXOSCD
EXOSCD
T+
V
T-
DV
T
t
= 1/f
EXOSC
EXOSC
t
EXOSCH
V
V
T-
= 2.4 to 5.5 V, V
= V
= 0 V
SS
SS2
Symbol
C
Programmed data is guaranteed to be
FEP
retained for 10 years.
voltage should be suppressed to within ±0.3 V on the basis of the ground potential of the MCU
SS
= V
= 1.8 to 5.5 V, V
= V
DD2
SS
P00–07, P10–17, P20–24, P40–47, PD0–D1, PD3–D4
T+
P50–54
P00–07, P10–17, P20–24, P40–47, PD0–D1, PD3–D4
T-
P50–54
P00–07, P10–17, P20–24, P40–47, P50–54, PD0–D1, PD3–D4
T
P00–07, P10–17, P20–24, P40–47, PD0–D4, V
P50–54, V
= 4.5〜5.5 V, V
DD2
P00–07, P10–17, P20–24, P40–47, PD0–D4, V
P50–54, V
= 0.1 × V
OL
DD2
P40–47, V
= 4.5〜5.5 V, V
DD
P00–07, P10–17, P20–24, P40–47, P50–54, PD0–D4
P00–07, P10–17, P20–24, P40–47, P50–54, PD0–D1, PD3–D4
INU
P00–07, P10–17, P20–24, P40–47, P50–54, PD0–D1, PD3–D4
IND
P00–07, P10–17, P20–24, P40–47, P50–54, PD0–D1, PD3–D4
IN
Seiko Epson Corporation
19 ELECTRICAL CHARACTERISTICS
100
Condition
= t
/t
EXOSCH
EXOSC
t
EXOSC
t
EXOSCH
V
T+
T+
, Ta = -40 to 85 °C
*1
Condition
= 0 V, Ta = -40 to 85 °C
SS2
Condition
= 0.9 × V
OH
= V
- 1.0 V
OH
DD2
= 0.1 × V
OL
= V
+ 1.0 V
OL
SS2
Min.
Typ.
Max.
46
–
54
0.5 × V
–
0.8 × V
DD
0.2 × V
–
0.5 × V
DD
180
–
–
= 1/f
EXOSC
V
T+
V
T-
Min.
Typ.
Max.
1,000
–
–
Min.
Typ.
Max.
0.5 × V
–
0.8 × V
DD
0.5 × V
–
0.8 × V
DD2
0.2 × V
–
0.5 × V
DD
0.2 × V
–
0.5 × V
DD2
180
–
–
–
–
-0.5
DD
–
–
-56
0.5
–
–
DD
2.0
–
–
7
–
–
-150
–
150
75
150
300
75
150
300
–
–
15
Unit
%
V
DD
V
DD
mV
Unit
times
Unit
V
DD
V
DD2
V
DD
V
DD2
mV
mA
mA
mA
mA
mA
nA
kW
kW
pF
19-5
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