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The self-programming interface is outlined below.
16.7.4 Hardware environment
To write or erase the flash memory, a high voltage must be applied to the V
circuit that can generate a write voltage (V
system. An example of a circuit that can select a voltage to be applied to the V
below.
Figure 16-14. Example of Self-Programming Circuit Configuration
= 5.0 V ±0.5 V
V
V
DD
DD
µ
PD70F3116
V
, AV
V
DD5
DD
= 7.8 V ±0.3 V
V
PP
Output port
V
, V
SS3
CHAPTER 16 FLASH MEMORY ( µ µ µ µ PD70F3116)
Figure 16-13. Outline of Self-Programming Interface
Application program
Entry program
Self-programming
interface
Device internal processing
Flash-memory manipulation
Flash memory
) and that can be controlled by software is necessary on the application
PP
= 3.3 V ±0.3 V
, CV
DD3
SS
V
PP
10 kΩ
≥ 10 kΩ
, CV
SS5
SS
User's Manual U14492EJ3V0UD
RAM parameter
pin. To execute self-programming, a
PP
pin by manipulating a port is shown
PP
IC for power supply
OUTPUT
INPUT
ON/OFF
V
SS
V
IN
741
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