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Custom Gate Drive Resistors
V
= 0 to 18 V
GS
V
= 400 V
DS
I
= 10 A
DS
Figure 32 Gate Resistor vs. Switching Speed at Turn-Off
Additional factors to consider:
70
– For general modeling purposes, a larger gate Drive resistor is good. The
PD1500A makes high power IV derivations. It requires a clean curve for
both V
and I
.
GS
DS
– For Gate Charge measurements having a plateau is important. Whether
the V
display shows the plateau depends on the device being tested
GS
(DUT) as well as voltage and current settings. A 100 R
better plateau than the 10 R
Always use High-Side and Low-Side Gate Drive Modules with the
same value resistors. Using a 100 Ω Gate Resistor on the
High-Side transistor and a 0 Ω resistor on the Low-Side transistor,
could cause false turn-on of the non-switching transistor due to
high dv/dt and the weakly-driven gate. A 0 Ω resistor on the
transistor that is not being switched is generally okay.
R
(in
di/dt
td (ns)
G
Ohms)
(A/µs)
100
290
480.5
86
331.3
425.4
54
429.7
281.7
10
778
113
779.7
43
.
G
Keysight Double-Pulse Test Fixture Installation and Use Guide
Selecting Gate Drive Resistors
tf (ns)
toff (ns)
dv/dt (V/µs)
110
590.5
4220.7
97.3
522.7
4492.8
71.3
353
6766
27
140
16210
19.6
62.6
24000
should give a
G
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