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Custom Gate Drive Resistors
Measured data for
blue plot
Measured data for
orange plot
Figure 33 Gate Resistor vs. di/dt for Reverse Recovery
72
R
(in
G
Ohms)
100
86
54
10
R
(in
di/dt
G
Ohms)
(A/µs)
100
86
54
10
– When measuring Reverse Recovery, R
important role. For switching characterization, use an R
the R
in your final design. If you have a specific R
G
PD1000-66540 and PD1000-66541 Gate Drive modules and install your
own resistors. Refer to
instructions on installing custom gate resistors.
di/dt
td (ns)
tf (ns)
(A/µs)
91
1.7
163
105
1.8
178
160
2.5
205
422
4.3
138
1891
8.5
134
td (ns)
tf (ns)
68
1.3
164
68
1.4
158
109
1.7
154
265
2.9
124
1132
4
114
on the High-Side module plays an
G
Appendix
B, "Installing Surface-Mount Devices" for
Keysight Double-Pulse Test Fixture Installation and Use Guide
Selecting Gate Drive Resistors
toff (ns)
dv/dt (V/µs)
218
2649
196
2892
140
4000
62.6
8587
33.7
19090
toff (ns)
dv/dt (V/µs)
313
1768
260
1946
169
2567
109
4861
58.9
9033
value similar to
G
, you can use the
G
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