Holtek HT67F2350 Manual page 64

Flash Memory Read/Write Procedure
After the Flash memory write function is successfully enabled through the preceding IAP procedure,
users must first erase the corresponding Flash memory block or page and then initiate the Flash
memory write operation. For these devices the number of the page erase operation is 32, 64 and 128
words per page respectively, the available page erase address is specified by FARH register and the
content of FARL [7:5], FARL [7:6] and FARL [7] bit field respectively.
Erase Page
0
1
2
3
4
:
:
254
255
Erase Page
0
1
2
3
4
:
:
254
255
Erase Page
0
1
2
3
4
:
:
510
511
Rev. 1.60
Advanced A/D Flash MCU with LCD & EEPROM
FARH
0000 0000
0000 0000
0000 0000
0000 0000
0000 0000
:
:
0001 1111
0001 1111
HT67F2350 Erase Page Number and Selection
FARH
0000 0000
0000 0000
0000 0000
0000 0000
0000 0001
:
:
0011 1111
0011 1111
HT67F2360 Erase Page Number and Selection
FARH
0000 0000
0000 0000
0000 0000
0000 0000
0000 0001
:
:
0111 1111
0111 1111
HT67F2370 Erase Page Number and Selection
64
HT67F2350/HT67F2360
HT67F2370/HT67F2390
FARL [7:5] FARL [4:0]
000 x xxxx
001 x xxxx
010 x xxxx
011 x xxxx
100 x xxxx
: :
: :
110 x xxxx
111 x xxxx
"x": don't care
FARL [7:6] FARL [5:0]
00 xx xxxx
01 xx xxxx
10 xx xxxx
11 xx xxxx
00 xx xxxx
: :
: :
10 xx xxxx
11 xx xxxx
"x": don't care
FARL [7:6] FARL [5:0]
00 xx xxxx
01 xx xxxx
10 xx xxxx
11 xx xxxx
00 xx xxxx
: :
: :
10 xx xxxx
11 xx xxxx
"x": don't care
May 16, 2019