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IR:MEMORY (I:MEM)
7-48
Stores the test conditions for an insulation resistance test to a specified memory
number. Also inquires about the contents of the memory with the specified number.
Message
Setting: IR:MEMORY (I: MEM)_<memory number, "memory
name", test voltage, lower reference, upper
reference, test time, lower judgment {ON|OFF},
upper judgment{ON|OFF}, timer{ON|OFF}, voltage
rise time, WAIT TIME, GND{GUARD|LOW}, contact
check{ON|OFF}, scanner Hi/Low, scanner Open>
IR:MEMORY?
Query:
I:MEM?
Program data
Data format: Integer
Set value:
0 to 99
Resolution:
1
Program data
Data format: String
Set value:
ASCII Code 20H to 7EH (up to 12 characters)
(Except 22H ("), 27H ('), 2CH (,), 3BH (;), and 40H (@))
Put Set value in 22H (".)
Program data
Data format: Real number
Set value:
10 to 1020
Resolution:
1
Unit:
V
Program data
Data format: Real number
• Resistance value-based judgment
Set value:
0.01 E6 to 9.99 E9
Resolution:
0.01 E6 (0.01 E6 to 9.99 E6), 0.1 E6 (10.0 E6 to 99.9 E6)
1 E6 (100 E6 to 999 E6), 0.01 E9 (1.00 E9 to 9.99 E9)
Ω
Unit:
• Current value-based judgment
Set value:
0.1 E-6 to 1.00 E-3
Resolution:
0.1 E-6 (0.1 E-6 to 99.9 E-6), 1 E-6 (100 E-6 to 1000 E-6)
Unit:
A
Program data
Data format: Real number
• Resistance value-based judgment
Set value:
0.01 E6 to 9.99 E9
Resolution:
0.01 E6 (0.01 E6 to 9.99 E6), 0.1 E6 (10.0 E6 to 99.9 E6)
1 E6 (100 E6 to 999 E6), 0.01 E9 (1.00 E9 to 9.99 E9)
Ω
Unit:
• Current value-based judgment
Set value:
0.1 E-6 to 1.00 E-3
<memory number>
<memory name>
<test voltage>
<lower reference>
<upper reference>
TOS9213S/ TOS9213AS
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