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Memory
2.8.3 FLASH Mass Erase Operation
Use this step-by-step procedure to erase the entire FLASH memory.
1. Set both the ERASE bit and the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH address
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE and MASS bits.
Mass erase is disabled whenever any block is protected (FLBPR does not
equal $FF).
8. Wait for a time, t
9. Clear the HVEN bit.
10. After time, t
RCV
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps.
1. When in monitor mode, with security sequence failed (see
of any FLASH address.
40
(minimum 10 µs).
NVS
(minimum 4 ms).
MErase
(minimum 100 µs).
NVHL
(typical 1 µs), the memory can be accessed in read mode again.
MC68HC908MR32 • MC68HC908MR16 Data Sheet, Rev. 6.1
(1)
within the FLASH memory address range.
NOTE
NOTE
18.3.2
Security), write to the FLASH block protect register instead
Freescale Semiconductor
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