Infineon Technologies CYPRESS Traveo Series Manual page 243

FLASH Memory
9.1.6
Electrical Characteristics
9.1.6.1
Parameter
Sector erase time
16bit write time(Program)
32bit write time(Program)
64bit write time(Program)
256bit write time(Program)
Page mode write time(Program)
32bit write time(Work)
Erase count /
Data retention time(Program)
Erase count /
Data retention time(Work)
*1: Guaranteed value for up to 1,000 erases
*2: Guaranteed value for up to 100,000 erases
Notes
9.1.6.2
While the Flash memory is written or erased, shutdown of the external power (Vcc5) is prohibited.
In the application system where Vcc5 might be shut down while writing or erasing, be sure to turn the power off by using an
external voltage detection function.
To put it concretely, after the external power supply voltage falls below the detection voltage (V
the duration calculated by the following expression:
Td *1 [μs] + ( 1 / F *2 [MHz] ) x 1029 + 25 [μs]
CRF
*1: See "9.1.4.11 Low Voltage Detection (External
*2: See "9.1.4.1 Source Clock
Document Number: 002-10634 Rev. *J
Rating
Min Typ
- 120
- 120
- 120
-
-
-
-
- 320
-
1,000/20
years
1,000/20
years
10,000/10
years
100,000/5
years
Voltage)"
Timing"
Unit
Max
180 ms
180 ms
180 ms
30 60 µs
30 60 µs
30 60 µs
70
40 µs
600
µs
60
30 µs
- - -
- - -
S6J3350 Series
Remarks
*1
Large sector
Internal preprogramming time included
*1
8kB sector
Internal preprogramming time included
4kB sector *2
Internal preprogramming time included
System-level overhead time excluded
System-level overhead time excluded
System-level overhead time excluded
System-level overhead time excluded
System-level overhead time excluded
System-level overhead time excluded
Temperature at write/erase time
Average temperature T = +85 degrees
A
Celsius
Temperature at write/erase time
Average temperature T = +85 degrees
A
Celsius
), hold Vcc5 at 2.7V or more within
DL
*1
*1
*1
*1
*1
*2
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