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PROCESS CONTROL
Potential
Sensor Detection
ID Sensor
Bias Level
4.0 V
ID Sensor
Output
While developing the ID sensor pattern, ID sensor bias is applied. ID sensor
bias is determined during process control data initial setting as follows:
Apply charge while grid voltage is –700 V to create the ID sensor pattern.
Check the drum potential (V
–700 V grid.
Adjust the ID sensor bias (V
V
= V
– (–300) (V)
IDB
P
= V
+ 300 (V)
P
Change the bias to the calculated V
V
adjustment sequence in the process control data initial setting and V
SG
are used to determine V
V
is not changed until the next process control data initial setting is done.
IDB
<V
correction timing>
REF
After the series of copies is completed in the case that 10 or more copies
have been made, V
V
, V
and the current TD sensor output (V
SG
SP
Since this V
REF
V
, V
', V
REF
REF
SG
formula.
V
is updated not only at the above case. But also during developer initial
REF
setting and during process control data initial setting.
V
P
V
P
–300
V
SP
A176D516.wmf
) of the latent image created by the charge with
P
) so that it satisfies the following formula.
IDB
data at process control data initial setting.
REF
is updated by referring to the previous V
REF
data updating is under fuzzy control, the relationship among
, V
and V
SP
TD
V
= V
+300 (V)
IDB
P
and detect V
IDB
TD
cannot be expressed by a simple algebraic
2-16
–700 V
. V
detected during
SP
SG
REF
).
15 July 1996
A176D517.wmf
SP
(V
'),
REF
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