Table 10.3. Dc Characteristics - Silicon Laboratories Si4010-C2 Manual

Crystal-less soc rf transmitter
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Table 10.3. DC Characteristics

(TA = 25° C, VDD = 3.3 V, RL = 480, unless otherwise noted)
Parameter
1
Supply Current
Sleep Timer Mode
Standby Supply Current
LED Sink Current
GPIO[0-9] Pull Up 
Resistance
2
High Level Input Voltage
2
Low Level Input Voltage
2
High Level Input Current
2
Low Level Input Current
High Level Output Voltage
Low Level Output Voltage
Notes:
1. Tested at 100 MHz carrier.
2. For GPIO pins configured as inputs. Pullup resistor disabled.
3. For GPIO pins configured as outputs.
Symbol
Test Condition
I
+10 dBm output, OOK,
VDD
+6.5 dBm output, OOK,
+10 dBm, FSK
+6.5 dBm output, FSK
I
Only sleep timer is enabled
ST
I
All GPIO floating or held high
SB
I
V
LED
OUT
R
PU
V
Trip point at 0.45 x V
IH
V
Trip point at 0.45 x V
IL
I
IH
I
IL
3
V
I
OH
SOURCE
3
V
I
OL
SINK
Rev. 1.0
Min
Manchester
Manchester
> 200 mV
48
DD
DD
V
= V
IN
DD
V
= 0
IN
= 500 µA
3.0
= 500 µA
Si4010-C2
Typ
Max
Unit
14.2
mA
11.3
mA
19.8
mA
14.1
mA
700
nA
10
nA
0.68
mA
55
62
k
0.506
V
x V
DD
0.42 x
V
V
DD
10
µA
10
µA
V
0.3
V
29

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