Chapter 1 Outline; Features - NEC MuPD78F0132H User Manual

1.1 Features

Minimum instruction execution time can be changed from high speed (0.125
speed system clock) to ultra low-speed (122
General-purpose register: 8 bits × 32 registers (8 bits × 8 registers × 4 banks)
ROM, RAM capacities
Part Number
µ
PD78F0132H
µ
PD78F0133H
µ
PD78F0134H
µ
PD78F0136H
µ
PD78F0138H, 78F0138HD
Note The internal flash memory, internal high-speed RAM capacities, and internal expansion RAM capacities
can be changed using the internal memory size switching register (IMS) and the internal expansion RAM
size switching register (IXS).
On-chip single-power-supply flash memory
Self-programming (with boot swap function)
On-chip debug function (
On-chip power-on-clear (POC) circuit and low-voltage detector (LVI)
Short startup is possible via the CPU default start using the on-chip Ring-OSC
On-chip clock monitor function using on-chip Ring-OSC
On-chip watchdog timer (operable with Ring-OSC clock)
On-chip multiplier/divider
On-chip key interrupt function
On-chip clock output/buzzer output controller
I/O ports: 51 (N-ch open drain: 4)
Timer
µ
PD78F0132H: 7 channels
µ
PD78F0133H, 78F0134H, 78F0136H, 78F0138H, 78F0138HD: 8 channels
Serial interface
µ
PD78F0132H: 2 channels
(UART (LIN (Local Interconnect Network)-bus supported): 1 channel, CSI/UART
µ
PD78F0133H, 78F0134H, 78F0136H, 78F0138H, 78F0138HD: 3 channels
(UART (LIN (Local Interconnect Network)-bus supported: 1 channel, CSI/UART
Note Select either of the functions of these alternate-function pins.
10-bit resolution A/D converter: 8 channels
Supply voltage: V
DD
Operating ambient temperature: T
Note Use the product in a voltage range of 2.2 to 5.5 V because the detection voltage (V
clear (POC) circuit is 2.1 V ±0.1 V.
16

CHAPTER 1 OUTLINE

µ
s: @ 32.768 kHz operation with subsystem clock)
Item Program Memory
(ROM)
Note
Flash memory
µ
PD78F0138HD only)
= 2.5 to 5.5 V (with Ring-OSC clock or subsystem clock: V
= −40 to +85°C
A
User's Manual U16899EJ2V0UD
Internal High-Speed RAM
16 KB 512 bytes
24 KB 1024 bytes
32 KB
48 KB 1024 bytes
60 KB
µ
s: @ 16 MHz operation with high-
Data Memory
Note
Internal Expansion RAM
−
1024 bytes
Note
: 1 channel)
Note
: 1 channel, CSI: 1 channel)
Note
= 2.0 to 5.5 V )
DD
) of the power-on-
POC
Note