Flash Memory Programming By Self-Writing - NEC MuPD78F0132H User Manual

26.8 Flash Memory Programming by Self-Writing

The 78K0/KE1+ supports a self-programming function that can be used to rewrite the flash memory via a user
program, so that the program can be upgraded in the field.
The programming mode is selected by bits 0 and 1 (FLSPM0 and FLSPM1) of the flash programming mode control
register (FLPMC).
The procedure of self-programming is illustrated below.
Remark For details of the self programming function, refer to the 78K0/Kx1+ Flash Memory Self Programming
User's Manual (under preparation).
CHAPTER 26 FLASH MEMORY
Figure 26-18. Self-Programming Procedure
Start self-programming
Secure entry RAM area
FLSPM1, FLSPM0 = 0, 1
FLMD0 pin = High level
Mask all interrupts
Set parameters
to entry RAM
CALL #8100H
Read parameters on RAM
and access flash memory
according to parameter contents
Mask interrupts again
FLMD0 pin = Low level
FLSPM1, FLSPM0 = 0, 0
End of self-programming
User's Manual U16899EJ2V0UD
Entry program
(user program)
Firmware
Entry program
(user program)
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