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Flash Memory Programming Characteristics
= −10 to +65°C, 2.7 V ≤ V
(T
A
Basic characteristics
Parameter
V
supply current
DD
Note 1
Unit erase time
Note 2
Erase time
All blocks
Block unit
Write time
Note 3
Number of rewrites per chip
Notes 1.
Time required for one erasure execution
2.
The total time for repetition of the unit erase time (255 times max.) until the data is erased completely.
Note that the prewrite time and the erase verify time (writeback time) before data erasure are not
included.
3.
Number of rewrites per block
4.
If a block erasure is executed after word units of data are written 512 times to a block (2 KB), it is
considered as one rewrite. Overwriting the same address without erasing the data in it is prohibited.
488
CHAPTER 29 ELECTRICAL SPECIFICATIONS
≤ 5.5 V, 2.7 V ≤ AV
≤ V
DD
REF
Symbol
I
f
= 16 MHz, V
DD
XP
T
erass
T
eraca
T
erasa
T
wrwa
C
1 erase + 1 write after erase = 1 rewrite
erwr
User's Manual U16899EJ2V0UD
, V
= 0 V)
DD
SS
Conditions
= 5.5 V
DD
Note 4
MIN.
TYP.
MAX.
32
10
0.01
2.55
0.01
2.55
50
500
100
Times
Unit
mA
ms
s
s
µ
s
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