Sd Card Interface - Quectel SG560D Series Hardware Design

⚫
To offer good ESD protection, it is recommended to add a TVS diode array with a parasitic
capacitance not exceeding 50 pF. The 22 Ω resistors should be added in series between the module
and the (U)SIM card to facilitate debugging. Add 22 pF capacitors parallel on USIM_DATA,
USIM_CLK and USIM_RST signal traces to filter RF interference, and place them as close to the
(U)SIM card connector as possible. Please note that the (U)SIM peripheral circuit should be close to
the (U)SIM card connector.
⚫
The pull-up resistor on USIM_DATA can improve anti-jamming capability of the (U)SIM card. If the
(U)SIM card traces are too long, or the interference source is relatively close, it is recommended to
add a pull-up resistor near the (U)SIM card connector.

4.3. SD Card Interface

The module supports SD 3.0 protocol. The pin definition of the SD card interface is shown below.
Table 16: Pin Definition of SD Card Interface
Pin Name Pin No.
SD_CLK 188
SD_CMD 180
SD_DATA0 184
SD_DATA1 185
SD_DATA2 177
SD_DATA3 181
SD_DET 174
SD_LDO9C 176
SD_LDO6C 173
SG560D_Series_Hardware_Design
I/O Description
DO SD card clock
DIO SD card command
DIO SDIO data bit 0
DIO SDIO data bit 1
DIO SDIO data bit 2
DIO SDIO data bit 3
DI SD card hot-swap detect
PO Power supply for SD card
SD card pull-up power
PO
supply
Smart Module Series
Comment
Control characteristic
impedance as 45 Ω.
Active low by default.
External 1.8 V pull-up is
required.
When using it, it is
recommended to add 1–4.7 μF
bypass capacitors with a total
capacitance not exceeding
18.8 μF.
Only for SD card pull-up. When
using it, it is recommended to
add 1–3 μF bypass capacitors
with a total capacitance not
exceeding 3 μF.
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