U)Sim Interfaces - Quectel SG560D Series Hardware Design

traces is forbidden. Isolation between USB 3.1 signals and RF signals should be more than 90 dB.
Otherwise, the RF signals will be seriously affected.
⚫
Ensure the trace length difference between TX_P and TX_M, as well as RX_P and RX_M of USB 3.1
does not exceed 0.7 mm.
⚫
Ensure the trace length difference between USB 2.0 DP and USB 2.0 DM differential pair does not
exceed 2 mm.
⚫
For USB 3.1, the spacing between Rx and Tx signal traces should be three times the signal trace
width. The spacing between USB 3.1 signal trace and other signal traces should be four times the
signal trace width.
⚫
For USB 2.0, the spacing between DP and DM signal traces should be three times the signal trace
width. The spacing between USB 2.0 signal traces and other signal traces should be four times the
signal trace width.

4.2. (U)SIM Interfaces

The module provides two (U)SIM interfaces which meet ETSI and IMT-2000 requirements. Dual SIM Dual
Standby is supported by default. Either 1.8 V or 2.95 V (U)SIM card is supported.
Table 15: Pin Definition of (U)SIM Interfaces
Pin Name
USIM1_VDD
USIM1_DATA
USIM1_CLK
USIM1_RST
SG560D_Series_Hardware_Design
Pin No. I/O
160 PO
165 DIO
164 DO
162 DO
Description
(U)SIM1 card power supply
(U)SIM1 card data
(U)SIM1 card clock
(U)SIM1 card reset
Smart Module Series
Comment
Either 1.8 V or 2.95 V
(U)SIM card is
supported and can be
identified
automatically by the
module.
When using it, it is
recommended to add
bypass capacitors
with a total
capacitance not
exceeding 3 μF.
Pull it up to
USIM1_VDD with an
external 20 kΩ
resistor.
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