NEC 78K0S/KB1+ User Manual page 349

CHAPTER 21 ELECTRICAL SPECIFICATIONS (Standard product, (A) grade product)
Flash Memory Programming Characteristics (T
Parameter Symbol
Supply current I
DD
Note 1
Erasure count
N
(per 1 block)
Chip erase time T
Block erase time T
Byte write time T
Internal verify T
Blank check T
Retention years
Note 1. Depending on the erasure count (N
erase time parameters.
2. When the average temperature when operating and not operating is 85°C.
Remark When a product is first written after shipment, "erase → write" and "write only" are both taken as one rewrite.
= –40 to +85°C, 2.7 V ≤ V
A
Conditions
V = 5.5 V
DD
= −40 to +85°C
T
ERASE A
= −10 to +85°C,
T
CERASE A
≤ 100
N
ERASE
= −10 to +85°C,
T
A
≤ 1000
N
ERASE
= −40 to +85°C,
T
A
≤ 100
N
ERASE
= −40 to +85°C,
T
A
≤ 1000
N
ERASE
= −10 to +85°C,
T
A
BERASE
≤ 100
N
ERASE
= −10 to +85°C,
T
A
≤ 1000
N
ERASE
= −40 to +85°C,
T
A
≤ 100
N
ERASE
= −40 to +85°C,
T
A
≤ 1000
N
ERASE
= −40 to +85°C, N
T
WRITE A ERASE
Per 1 block
VERIFY
Per 1 byte
Per 1 block
BLKCHK
Note 2
T = 85°C , N
A ERASE
), the erase time varies. Refer to the chip erase time and block
ERASE
User's Manual U17446EJ3V1UD
Standard product, (A) grade product T
≤ 5.5 V, V
DD
4.5 V ≤ V ≤ 5.5 V
DD
3.5 V ≤ V
< 4.5 V
DD
2.7 V ≤ V
< 3.5 V
DD
4.5 V ≤ V ≤ 5.5 V
DD
3.5 V ≤ V
< 4.5 V
DD
2.7 V ≤ V
< 3.5 V
DD
4.5 V ≤ V ≤ 5.5 V
DD
3.5 V ≤ V
< 4.5 V
DD
2.7 V ≤ V
< 3.5 V
DD
4.5 V ≤ V ≤ 5.5 V
DD
3.5 V ≤ V
< 4.5 V
DD
2.7 V ≤ V
< 3.5 V
DD
4.5 V ≤ V ≤ 5.5 V
DD
3.5 V ≤ V
< 4.5 V
DD
2.7 V ≤ V
< 3.5 V
DD
4.5 V ≤ V ≤ 5.5 V
DD
3.5 V ≤ V
< 4.5 V
DD
2.7 V ≤ V
< 3.5 V
DD
4.5 V ≤ V ≤ 5.5 V
DD
3.5 V ≤ V
< 4.5 V
DD
2.7 V ≤ V
< 3.5 V
DD
4.5 V ≤ V ≤ 5.5 V
DD
3.5 V ≤ V
< 4.5 V
DD
2.7 V ≤ V
< 3.5 V
DD
≤ 1000
≤ 1000
= −40 to +85°C
A
= 0 V)
SS
MIN. TYP. MAX.
7.0
1000 Times
0.8
1.0
1.2
4.8
5.2
6.1
1.6
1.8
2.0
9.1
10.1
12.3
0.4
0.5
0.6
2.6
2.8
2.3
0.9
1.0
1.1
4.9
5.4
6.6
150
6.8
27
480
10 Years
Unit
mA
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
μ
s
ms
μ
s
μ
s
349