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Electrical characteristics
6.3.3
Embedded internal reference voltage
The parameters given in
specified.
Calibration value name
VREFINT_CAL
Symbol
(1)
V
Internal reference voltage
REFINT out
Internal reference current
I
REFINT
consumption
T
Internal reference startup time
VREFINT
V
DDA
V
VREF_MEAS
V
REFINT
Accuracy of factory-measured V
A
VREF_MEAS
value
(3)
T
Temperature coefficient
Coeff
(3)
A
Long-term stability
Coeff
(3)
V
Voltage coefficient
DDCoeff
ADC sampling time when reading
(3)
T
S_vrefint
the internal reference voltage
Startup time of reference voltage
(3) (4)
T
ADC_BUF
buffer for ADC
Consumption of reference voltage
(3)
I
BUF_ADC
buffer for ADC
(3)
I
VREF_OUT output current
VREF_OUT
(3)
C
VREF_OUT output load
VREF_OUT
Consumption of reference voltage
(3)
I
LPBUF
buffer for VREF_OUT and COMP
(3)
V
1/4 reference voltage
REFINT_DIV1
(3)
V
1/2 reference voltage
REFINT_DIV2
(3)
V
3/4 reference voltage
REFINT_DIV3
1. Guaranteed by test in production.
2. The internal V
value is individually measured in production and stored in dedicated EEPROM bytes.
REF
3. Guaranteed by characterization results.
4. Shortest sampling time can be determined in the application by multiple iterations.
54/123
Table 17
Table 16. Embedded internal reference voltage calibration values
Table 17. Embedded internal reference voltage
Parameter
and V
voltage during
REF+
factory measure
(2)
(5)
DocID022881 Rev 10
are based on characterization results, unless otherwise
Description
Raw data acquired at
temperature of 30 °C ±5 °C
V
= 3 V ±10 mV
DDA
Conditions
– 40 °C < T
< +110 °C 1.202 1.224
J
-
-
-
Including uncertainties
REF
due to ADC and
V
/V
values
DDA
REF+
–40 °C < T
< +110 °C
J
1000 hours, T= 25 °C
3.0 V < V
< 3.6 V
DDA
-
-
-
-
-
-
-
-
-
STM32L162VC, STM32L162RC
Memory address
0x1FF8 00F8 - 0x1FF8 00F9
Min
Typ
Max
1.242
-
1.4
2.3
-
2
3
2.99
3
3.01
-
-
±5
-
25
100
-
-
1000
-
-
2000
4
-
-
-
-
10
-
13.5
25
-
-
1
-
-
50
-
730
1200
24
25
26
49
50
51
74
75
76
Unit
V
µA
ms
V
mV
ppm/°
C
ppm
ppm/V
µs
µs
µA
µA
pF
nA
%
V
REFIN
T
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