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STM32L151xE STM32L152xE
6.3.3
Embedded internal reference voltage
The parameters given in
specified.
Calibration value name
VREFINT_CAL
Symbol
(1)
V
Internal reference voltage
REFINT out
Internal reference current
I
REFINT
consumption
T
Internal reference startup time
VREFINT
V
DDA
V
VREF_MEAS
V
REFINT
Accuracy of factory-measured V
A
VREF_MEAS
value
(3)
T
Temperature coefficient
Coeff
(3)
A
Long-term stability
Coeff
(3)
V
Voltage coefficient
DDCoeff
ADC sampling time when reading
(3)
T
S_vrefint
the internal reference voltage
Startup time of reference voltage
(3)
T
ADC_BUF
buffer for ADC
Consumption of reference voltage
(3)
I
BUF_ADC
buffer for ADC
(3)
I
VREF_OUT output current
VREF_OUT
(3)
C
VREF_OUT output load
VREF_OUT
Consumption of reference voltage
(3)
I
LPBUF
buffer for VREF_OUT and COMP
(3)
V
1/4 reference voltage
REFINT_DIV1
(3)
V
1/2 reference voltage
REFINT_DIV2
(3)
V
3/4 reference voltage
REFINT_DIV3
1. Guaranteed by test in production.
2. The internal V
value is individually measured in production and stored in dedicated EEPROM bytes.
REF
3. Guaranteed by characterization results.
4. To guarantee less than 1% VREF_OUT deviation.
Table 16
Table 15. Embedded internal reference voltage calibration values
Table 16. Embedded internal reference voltage
Parameter
and V
voltage during
REF+
factory measure
(2)
(4)
DocID025433 Rev 8
are based on characterization results, unless otherwise
Description
Raw data acquired at
temperature of 30 °C ±5 °C
V
= 3 V ±10 mV
DDA
Conditions
– 40 °C < T
< +110 °C 1.202 1.224
J
-
-
-
Including uncertainties
REF
due to ADC and
V
/V
values
DDA
REF+
–40 °C < T
< +110 °C
J
1000 hours, T= 25 °C
3.0 V < V
< 3.6 V
DDA
-
-
-
-
-
-
-
-
-
Electrical characteristics
Memory address
0x1FF8 00F8 - 0x1FF8 00F9
Min
Typ
Max
1.242
-
1.4
2.3
-
2
3
2.99
3
3.01
-
-
±5
-
25
100
-
-
1000
-
-
2000
4
-
-
-
-
10
-
13.5
25
-
-
1
-
-
50
-
730
1200
24
25
26
49
50
51
74
75
76
Unit
V
µA
ms
V
mV
ppm/°
C
ppm
ppm/V
µs
µs
µA
µA
pF
nA
%
V
REFIN
T
63/134
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