Electrical characteristics
6.3.3
Embedded internal reference voltage
The parameters given in the following table are based on characterization results, unless
otherwise specified.
Calibration value name
VREFINT_CAL
Symbol
(1)
V
Internal reference voltage
REFINT out
I
Internal reference current consumption
REFINT
T
Internal reference startup time
VREFINT
V
DDA
V
VREF_MEAS
factory measure
Accuracy of factory-measured V
A
VREF_MEAS
value
(3)
T
Temperature coefficient
Coeff
(3)
A
Long-term stability
Coeff
(3)
V
Voltage coefficient
DDCoeff
ADC sampling time when reading the
(3)(4)
T
S_vrefint
internal reference voltage
Startup time of reference voltage buffer
(3)
T
ADC_BUF
for ADC
Consumption of reference voltage
(3)
I
BUF_ADC
buffer for ADC
(3)
I
VREF_OUT output current
VREF_OUT
(3)
C
VREF_OUT output load
VREF_OUT
Consumption of reference voltage
(3)
I
LPBUF
buffer for VREF_OUT and COMP
(3)
V
1/4 reference voltage
REFINT_DIV1
(3)
V
1/2 reference voltage
REFINT_DIV2
(3)
V
3/4 reference voltage
REFINT_DIV3
1. Tested in production.
2. The internal V
value is individually measured in production and stored in dedicated EEPROM bytes.
REF
3. Guaranteed by design, not tested in production.
4. Shortest sampling time can be determined in the application by multiple iterations.
5. To guarantee less than 1% VREF_OUT deviation.
54/129
Table 15. Embedded internal reference voltage calibration values
Table 16. Embedded internal reference voltage
Parameter
and V
voltage during V
REF+
(2)
(5)
Description
Raw data acquired at
temperature of 30 °C, V
Conditions
– 40 °C < T
< +105 °C 1.202 1.224 1.242
J
-
-
REFINT
-
Including uncertainties
REF
due to ADC and
V
/V
DDA
REF+
–40 °C < T
< +105 °C
J
0 °C < T
< +50 °C
J
1000 hours, T= 25 °C
3.0 V < V
DDA
-
-
-
-
-
-
-
-
-
DocID17659 Rev 10
STM32L151x6/8/B, STM32L152x6/8/B
Memory address
0x1FF8 0078-0x1FF8 0079
= 3 V
DDA
Min
Typ
-
1.4
-
2
2.99
3
-
-
values
-
20
-
-
-
-
< 3.6 V
-
-
5
10
-
-
-
13.5
-
-
-
-
-
730
24
25
49
50
74
75
Max
Unit
V
2.3
µA
3
ms
3.01
V
±5
mV
50
ppm/°C
20
1000
ppm
2000
ppm/V
-
µs
10
µs
25
µA
1
µA
50
pF
1200
nA
26
51
% V
REFINT
76
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