Embedded Reference Voltage; Table 22. Embedded Internal Reference Voltage - STMicroelectronics STM32F031F4 Manual

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Electrical characteristics
Symbol
V
PVD4
V
PVD5
V
PVD6
V
PVD7
V
PVDhyst
I
DD(PVD)
1. Guaranteed by design, not tested in production.
6.3.4

Embedded reference voltage

The parameters given in
temperature and supply voltage conditions summarized in
conditions.
Symbol
V
REFINT
t
START
t
S_vrefint
V
REFINT
T
Coeff
1. Data based on characterization results, not tested in production.
2. Guaranteed by design, not tested in production.
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Table 21. Programmable voltage detector characteristics (continued)
Parameter
PVD threshold 4
PVD threshold 5
PVD threshold 6
PVD threshold 7
(1)
PVD hysteresis
PVD current consumption
Table 22

Table 22. Embedded internal reference voltage

Parameter
Internal reference voltage
ADC_IN17 buffer startup
time
ADC sampling time when
reading the internal
reference voltage
Internal reference voltage
spread over the
temperature range
Temperature coefficient
DocID025743 Rev 3
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Conditions
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
are derived from tests performed under the ambient
Conditions
–40 °C < T < +105 °C
A
–40 °C < T < +85 °C
A
-
-
V = 3 V
DDA
-
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STM32F031x4 STM32F031x6
Min Typ Max
2.47 2.58 2.69
2.37 2.48 2.59
2.57 2.68 2.79
2.47 2.58 2.69
2.66 2.78 2.9
2.56 2.68 2.8
2.76 2.88 3
2.66 2.78 2.9
- 100 -
- 0.15 0.26
Table 18: General operating
Min Typ Max
1.16 1.2 1.25
1.16 1.2 1.24
(2)
- - 10
(2)
- -
4
(2)
- -
10
(2) (2)
-
- 100 100
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Unit
V
V
V
V
V
V
V
V
mV
(1)
µA
Unit
V
(1)
V
µs
µs
mV
ppm/°C