Embedded Reference Voltage; Supply Current Characteristics; Table 25. Embedded Internal Reference Voltage - STMicroelectronics STM32F042F4 Manual

STM32F042x4 STM32F042x6
Symbol
V
PVD6
V
PVD7
V
PVDhyst
I
DD(PVD)
1. Guaranteed by design, not tested in production.
6.3.4

Embedded reference voltage

The parameters given in
temperature and supply voltage conditions summarized in
conditions.
Symbol
V
REFINT
t
START
t
S_vrefint
∆V
REFINT
T
Coeff
1. Guaranteed by design, not tested in production.
6.3.5

Supply current characteristics

The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in
measurement
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to CoreMark code.
Table 24. Programmable voltage detector characteristics (continued)
Parameter
PVD threshold 6
PVD threshold 7
(1)
PVD hysteresis
PVD current consumption
Table 25

Table 25. Embedded internal reference voltage

Parameter
Internal reference voltage –40 °C < T
ADC_IN17 buffer startup
time
ADC sampling time when
reading the internal
reference voltage
Internal reference voltage
spread over the
temperature range
Temperature coefficient
scheme.
DocID025832 Rev 5
Conditions
Rising edge
Falling edge
Rising edge
Falling edge
-
-
are derived from tests performed under the ambient
Conditions
< +105 °C
A
-
-
V = 3 V
DDA
-
Figure 14: Current consumption
Electrical characteristics
Min Typ Max
2.66 2.78 2.9
2.56 2.68 2.8
2.76 2.88 3
2.66 2.78 2.9
- 100 -
- 0.15 0.26
Table 21: General operating
Min Typ Max
1.2 1.23 1.25
(1)
- - 10
(1)
- -
4
(1)
- -
10
(1) (1)
-
- 100 100
Unit
V
V
V
V
mV
(1)
µA
Unit
V
µs
µs
mV
ppm/°C
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