Embedded Reference Voltage; Table 25. Embedded Internal Reference Voltage - STMicroelectronics STM32F042G4 Manual

STM32F042xx
Symbol
V
PVD4
V
PVD5
V
PVD6
V
PVD7
V
PVDhyst
I
DD(PVD)
1. Guaranteed by design, not tested in production.
6.3.4

Embedded reference voltage

The parameters given in
temperature and supply voltage conditions summarized in
conditions.
Symbol
V
REFINT
t
S_vrefint
V
REFINT
T
Coeff
1. Data based on characterization results, not tested in production.
2. Guaranteed by design, not tested in production.
Table 24. Programmable voltage detector characteristics (continued)
Parameter
PVD threshold 4
PVD threshold 5
PVD threshold 6
PVD threshold 7
(1)
PVD hysteresis
PVD current consumption
Table 25

Table 25. Embedded internal reference voltage

Parameter
Internal reference voltage
ADC sampling time when
reading the internal
reference voltage
Internal reference voltage
spread over the
temperature range
Temperature coefficient
DocID025832 Rev 2
Conditions
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
are derived from tests performed under the ambient
Conditions
–40 °C < T < +105 °C
A
–40 °C < T < +85 °C
A
V = 3 V
DDA
Electrical characteristics
Min Typ Max
2.47 2.58 2.69
2.37 2.48 2.59
2.57 2.68 2.79
2.47 2.58 2.69
2.66 2.78 2.9
2.56 2.68 2.8
2.76 2.88 3
2.66 2.78 2.9
- 100 -
- 0.15 0.26
Table 21: General operating
Min Typ Max
1.16 1.2 1.25
1.16 1.2 1.24
(2)
- -
4
(2)
- -
10
(2) (2)
-
- 100 100
Unit
V
V
V
V
V
V
V
V
mV
(1)
μA
Unit
V
(1)
V
μs
mV
ppm/°C
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