Emc Characteristics; Table 38. Ems Characteristics - STMicroelectronics STM32L162RC Manual

Ultra-low-power 32-bit mcu arm-based cortex -m3, 256kb flash, 32kb sram, 8kb eeprom, lcd, usb, adc, dac, aes
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STM32L162VC, STM32L162RC
6.3.10

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
SS
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in
defined in application note AN1709.
Symbol
V
FESD
V
EFTB
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
Corrupted program counter
Unexpected reset
Critical data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the oscillator pins for 1
second.
through a 100 pF capacitor, until a functional disturbance occurs. This test is
Table

Table 38. EMS characteristics

Parameter
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
pins to induce a functional disturbance
DocID022881 Rev 10
38. They are based on the EMS levels and classes
= 3.3 V, LQFP100, T
V
DD
f
HCLK
conforms to IEC 61000-4-2
= 3.3 V, LQFP100, T
V
DD
°C,
and V
DD
SS
f
HCLK
conforms to IEC 61000-4-4
Conditions
= +25 °C,
A
= 32 MHz
= +25
A
= 32 MHz
and
DD
Level/
Class
2B
4A
77/123
104

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