Holtek BS86DH12C Manual page 41

High voltage touch a/d flash mcu with hvio
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BS86DH12C
High Voltage Touch A/D Flash MCU with HVIO
Programming Examples
Reading data from the EEPROM – polling method
MOV A, EEPROM_ADRES
MOV EEA, A
MOV A, 040H
MOV MP1L, A
MOV A, 01H
MOV MP1H, A
SET IAR1.1
SET IAR1.0
BACK:
SZ IAR1.0
JMP BACK
CLR IAR1
CLR MP1H
MOV A, EED
MOV READ_DATA, A
Note: For each read operation, the address register should be re-specified followed by setting the RD
bit high to activate a read cycle even if the target address is consecutive.
Writing Data to the EEPROM – polling method
MOV A, EEPROM_ADRES
MOV EEA, A
MOV A, EEPROM_DATA
MOV EED, A
MOV A, 040H
MOV MP1L, A
MOV A, 01H
MOV MP1H, A
CLR EMI
SET IAR1.3
SET IAR1.2
SET EMI
BACK:
SZ IAR1.2
JMP BACK
CLR MP1H
Rev. 1.00
; user defined address
; set memory pointer MP1L
; MP1L points to EEC register
; set memory pointer MP1H
; set RDEN bit, enable read operations
; start Read Cycle - set RD bit
; check for read cycle end
; disable EEPROM read if no more read operations are required
; move read data to register
; user defined address
; user defined data
; set memory pointer MP1L
; MP1L points to EEC register
; set memory pointer MP1H
; set WREN bit, enable write operations
; start Write Cycle - set WR bit – executed immediately
; after setting WREN bit
; check for write cycle end
41
October 26, 2018

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