BS86DH12C
High Voltage Touch A/D Flash MCU with HVIO
Input/Output Characteristics
Symbol
Parameter
V
Input Low Voltage for I/O Ports
IL
V
Input High Voltage for I/O Ports
IH
Sink Current for I/O Ports
I
OL
(PA, PB, PC)
Source Current for I/O Ports
I
OH
(PA, PB, PC)
R
Pull-high Resistance for I/O Ports
PH
I
Input Leakage Current
LEAK
t
TM Clock Input Pin Minimum Pulse Width
TCK
t
TM Capture Input Pin Minimum Pulse Width
TPI
t
External Interrupt Minimum Pulse Width
INT
Note: The R
internal pull high resistance value is calculated by connecting to ground and enabling the input pin
PH
with a pull-high resistor and then measuring the pin current at the specified supply voltage level. Dividing
the voltage by this measured current provides the R
Memory Characteristics
Symbol
Parameter
V
V
for Read / Write
RW
DD
Flash Program / Data EEPROM Memory
Erase / Write Cycle Time – Flash Program
Memory
t
DEW
Write Cycle Time – Data EEPROM Memory
I
Programming / Erase Current on V
DDPGM
E
Cell Endurance
P
t
ROM Data Retention Time
RETD
RAM Data Memory
V
RAM Data Retention Voltage
DR
Rev. 1.00
Test Conditions
V
Conditions
DD
5V
—
—
5V
—
—
V
=0.1V
,
OL
DD
PxNS=0, x=A, B or C
5V
V
=0.1V
,
OL
DD
PxNS=1, x=A, B or C
V
=0.9V
,
OH
DD
SLEDCn[m+1:m]=00B
(n=0, 1; m=0, 2, 4 or 6)
V
=0.9V
,
OH
DD
SLEDCn[m+1:m]=01B
(n=0, 1; m=0, 2, 4 or 6)
5V
V
=0.9V
,
OH
DD
SLEDCn[m+1:m]=10B
(n=0, 1; m=0, 2, 4 or 6)
V
=0.9V
,
OH
DD
SLEDCn[m+1:m]=11B
(n=0, 1; m=0, 2, 4 or 6)
(Note)
5V
—
5V
V
=V
or V
IN
DD
IN
—
—
—
—
—
—
value.
PH
Ta=-40°C~85°C, unless otherwise specified
Test Conditions
V
Conditions
DD
—
—
—
—
—
—
—
—
DD
—
—
—
Ta=25°C
—
Device in SLEEP Mode
19
Min.
Typ.
Max.
0
—
1.5
0
—
0.2V
DD
3.5
—
5.0
0.8V
—
V
DD
DD
32
64
—
50
100
—
-1.5
-2.9
—
-2.5
-5.1
—
-3.6
-7.3
—
-8
-16
—
10
30
50
=V
—
—
±1
SS
0.3
—
—
0.3
—
—
10
—
—
Min.
Typ.
Max.
V
—
V
DDmin
DDmax
—
2
3
—
4
6
—
—
5.0
100K
—
—
—
40
—
1.0
—
—
October 26, 2018
Ta=25°C
Unit
V
V
mA
mA
kΩ
μA
μs
μs
μs
Unit
V
ms
ms
mA
E/W
Year
V
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