BS86DH12C
High Voltage Touch A/D Flash MCU with HVIO
Internal Reference Voltage Characteristics
Symbol
Parameter
V
Bandgap Reference Voltage
BG
t
V
Turn-on Stable Time
BGS
BG
Note: 1. All the above parameters are measured under conditions of no load condition unless otherwise described.
2. A 0.1μF ceramic capacitor should be connected between VDD and GND.
3. The V
voltage is used as the A/D converter internal signal input.
BG
High Voltage I/O Electrical Characteristics
Symbol
Parameter
V
Input Voltage
IN
V
Input High Voltage for High Voltage I/O Ports
IH
V
Input Low Voltage for High Voltage I/O Ports
IL
I
Source Current for High Voltage I/O Ports
OH
I
Sink Current for High Voltage I/O Ports
OL
t
Short Circuit Flag Response Time
SF
Voltage Detector Electrical Characteristics
Symbol
Parameter
V
Input Voltage
IN
V
V
Detect Level
(Note)
DET1
CC2
V
V
Release Level
RLS1
CC2
V
Hysteresis
HYS1
V
V
Detect Level
DET2
DD
V
V
Release Level
(Note)
RLS2
DD
V
Hysteresis
HYS2
Rev. 1.00
Test Conditions
V
DD
—
—
No load
V
=0.9×V
OH
V
=0.1×V
OL
SFRTC=0, Ta=25°C
SFRTC=0, Ta=-40°C~85°C
SFRTC=1, Ta=25°C
SFRTC=1, Ta=-40°C~85°C
Test Conditions
V
Conditions
DD
—
—
V
=0V → 10V
IN
—
V
=10V → 0V
(Note)
IN
—
V
=10V ↔ 5V
IN
—
V
=0V → 5V
DD
—
V
=5V → 0V
DD
—
V
=0V ↔ 5V
DD
21
Min.
Typ.
Conditions
—
-5%
1.04
—
—
V
=5V, Ta=25°C, unless otherwise specified
DD
Test Conditions
Min.
—
V
DET1
—
0.6V
IN
—
0
, V
=10V
-40
IN
IN
, V
=10V
50
IN
IN
2
1.5
1.0
0.75
Min.
Typ.
—
V
—
DET1
Typ.-
7
0.5
V
-V
DET1
100
750
Typ.
2.5
-0.2
V
-V
DET2
100
250
Ta=25°C
Max.
Unit
+5%
V
150
μs
Typ.
Max.
Unit
—
10
V
—
V
V
IN
—
0.3V
V
IN
-70
—
mA
80
—
mA
—
3
—
3.9
ms
—
1.5
—
1.85
Ta=25°C
Max.
Unit
10
V
Typ.
V
+0.5
V
HYS1
1000
mV
Typ.
V
+0.2
V
HYS2
500
mV
October 26, 2018
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