Input/Output Characteristics; Memory Characteristics - Holtek BS83A04C Manual

BS83A04C
4-Key Enhanced Touch I/O Flash MCU

Input/Output Characteristics

Symbol Parameter
V Input Low Voltage for I/O Port or Input Pins
IL
V Input High Voltage for I/O Port or Input Pins
IH
I Sink Current for I/O Ports
OL
I Source Current for I/O Ports
OH
R Pull-high Resistance for I/O Port
PH
I Input Leakage Current
LEAK
t TM TCK Input Pin Minimum Pulse Width
TCK
t External Interrupt Minimum Pulse Width
INT
Note: The R internal pull high resistance value is calculated by connecting to ground and enabling the input pin
PH
with a pull-high resistor and then measuring the pin current at the specified supply voltage level. Dividing
the voltage by this measured current provides the R

Memory Characteristics

Symbol Parameter
Flash Program Memory / Emulated EEPROM Memory
Operating Voltage for Read
Operating Voltage for Erase/Write – Flash
V Program Memory
DD
Operating Voltage for Erase/Write –
Emulated EEPROM Memory
Erase / Write Time – Flash Program Memory
t
Erase / Write Cycle Time – Emulated
DEW
EEPROM Memory
I Programming/Erase Current on V
DDPGM
E Cell Endurance
P
t ROM Data Retention Time
RETD
RAM Data Memory
V Operating Voltage for Read/Write
DD
V RAM Data Retention Voltage
DR
Note: The Emulated EEPROM erase/write operation can only be executed when the f
to or greater than 2MHz.
Rev. 1.00
Test Conditions
V Conditions
DD
5V
—
—
5V
—
—
3V
V =0.1V
OL DD
5V
3V
V =0.9V
OH DD
5V
3V
LVPU=0
5V
(Note)
3V
LVPU=1
5V
5V V =V or V
IN DD IN
— —
— —
value.
PH
Ta=-40°C~85°C, unless otherwise specified
Test Conditions
V Conditions
DD
— —
— —
— —
5V Ta=25°C
— EWRTS[1:0]=00B
— EWRTS[1:0]=01B
— EWRTS[1:0]=10B
— EWRTS[1:0]=11B
5V —
DD
— —
— Ta=25°C
— —
— Device in SLEEP Mode
13
Ta=-40°C~85°C
Min. Typ. Max.
0 — 1.5
0 — 0.2V
DD
3.5 — 5.0
0.8V — V
DD DD
16 32 —
32 65 —
-4 -8 —
-8 -16 —
20 60 100
10 30 50
6.67 15.00 23.00
3.5 7.5 12.0
=V — — ±1
SS
0.3 — —
10 — —
Min. Typ. Max.
1.8 — 5.5
3.0 — 5.5
4.5 5.0 5.5
— 2 3
— 2 3
— 4 6
— 8 12
— 16 24
— — 5.0
10K — —
— 40 —
V — V
DDmin DDmax
1.0 — —
clock frequency is equal
SYS
March 24, 2020
Unit
V
V
mA
mA
kΩ
μA
μs
μs
Unit
V
ms
ms
mA
E/W
Year
V
V