Samsung S3F80JB User Manual page 313

S3F80JB
Minimun Instruction
Clock
2 MHz
1.5MHz
1MHz
500 kHz
250 kHz
1kHz
Minimun Instruction Clock = 1/4n x oscillator frequency (n = 1, 2, 8, or 16)
A: 1.7 V, 4 MHz
Table 17-9. AC Electrical Characteristics for Internal Flash ROM
= – 25 °C to + 85 °C)
(T
A
Parameter
Flash Write/Erase Voltage
Flash Read Voltage
(1)
Programming Time
(2)
Sector Erasing Time
(3)
Chip Erasing Time
Data Access Time
Number of Writing/Erasing
Data Retention
NOTES:
1. The programming time is the time during which one byte (8-bit) is programmed.
2. The Sector erasing time is the time during which all 128-bytes of one sector block is erased.
3. In the case of S3F80J9, the chip erasing is available in Tool Program Mode only.
A
1 2 3 4
Supply Voltage (V)
Figure 17-12. Operating Voltage Range of S3F80J9
Symbol Conditions
Fwe
Frv
Ftp
Ftp1
Ftp2
Ft V
RS DD
FNwe
Ftdr
f
OSC
(Main Oscillator Frequency)
8 MHz
6 MHz
4 MHz
2 MHz
1 MHz
400 kHz
5 6 7
Min
1.95
1.7
32
10
50
= 2.0 V
–
– 10,000
– 10
ELECTRICAL DATA (4MHz)
Typ Max
– 3.6
–
3.6
– 60
– 20
– 100
250 –
– – Times
– –
Unit
V
V
µS
mS
mS
nS
Years
17-13