Programming - Samsung S3F80JB User Manual

S3F80JB
PROGRAMMING TIP — Programming
Case1. 1-Byte Programming
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WR_BYTE:
SB1
LD FMUSR,#0A5H
LD FMCON,#01010000B
LD FMSECH, #40H
LD FMSECL, #00H
LD R9,#0AAH
LD R10,#40H
LD R11,#10H
LDC @RR10,R9
LD FMUSR,#00H
SB0
Case2. Programming in the same sector
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WR_INSECTOR:
LD R0,#40H
SB1
LD FMUSR,#0A5H
LD FMCON,#01010000B
LD FMSECH,#40H
LD FMSECL,#00H
LD R9,#33H
LD R10,#40H
LD R11,#40H
WR_BYTE:
LDC @RR10,R9
INC R11
DJNZ R0,WR_BYTE
LD FMUSR,#00H
SB0
; Write data "AAH" to destination address 4010H
; User program mode enable
; Selection programming mode
; Set the base address of sector (4000H)
; Load data "AA" to write
; Load flash memory upper address into upper register of pair working
; register
; Load flash memory lower address into lower register of pair working
; register
; Write data 'AAH' at flash memory location (4010H)
; User program mode disable
; RR10-->Address copy (R10 –high address,R11-low address)
; User program mode enable
; Selection programming mode and Start programming
; Set the base address of sector located in target address to write data
; The sector 128's base address is 4000H.
; Load data "33H" to write
; Load flash memory upper address into upper register of pair working
; register
; Load flash memory lower address into lower register of pair working
; register
; Write data '33H' at flash memory location
; Reset address in the same sector by INC instruction
; Check whether the end address for programming reach 407FH or not.
; User Program mode disable
EMBEDDED FLASH MEMORY INTERFACE
15-15