Samsung S3F80JB User Manual page 317

8-bit cmos microcontrollers
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ELECTRICAL DATA (8MHz)
= – 25 °C to + 85 °C, V
(T
A
Parameter
Symbol
Supply Current
(note)
NOTE: Supply current does not include current drawn through internal pull-up resistors or external output current loads.
= – 25 °C to + 85 °C)
(T
A
Parameter
Hysteresis Voltage of LVD
(Slew Rate of LVD)
Low Level Detect Voltage
For Back-Up Mode
Low Level Detect Voltage
For Flag Indicator
NOTE: The voltage gap between LVD and LVD FLAG is 150mV.
= – 25 °C to + 85 °C)
(T
A
Parameter
Data Retention Supply
Voltage
Data Retention Supply
Current
18-4
Table 18-2. D.C. Electrical Characteristics (Continued)
= 1.95 V to 3.6 V)
DD
Conditions
I
Operating Mode
DD1
V
= 3.6 V
DD
8 MHz crystal
I
Idle Mode
DD2
V
=3.6 V
DD
8 MHz crystal
I
Stop Mode
DD3
LVD OFF, V
DD
Stop Mode
LVD ON, V
DD
Table 18-3. Characteristics of Low Voltage Detect Circuit
Symbol
∆V
LVD
LVD_FLAG
Table 18-4. Data Retention Supply Voltage in Stop Mode
Symbol
V
DDDR
I
DDDR
Min
= 3.6 V
= 3.6 V
Conditions
Conditions
V
= 1.5 V
DDDR
Stop Mode
Typ
Max
5
9
1.0
2.5
1
6
10
20
Min
Typ
Max
100
300
1.95
2.15
2.35
2.1
2.3
2.5
Min
Typ
Max
1.5
3.6
1
S3F80JB
Unit
mA
uA
Unit
mV
V
V
Unit
V
µA

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