Samsung S3F80JB User Manual page 304

8-bit cmos microcontrollers
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ELECTRICAL DATA (4MHz)
= – 25 °C to + 85 °C, V
(T
A
Parameter
Symbol
Supply Current
(note)
NOTE: Supply current does not include current drawn through internal pull-up resistors or external output current loads.
= – 25 °C to + 85 °C)
(T
A
Parameter
Hysteresys voltage of LVD
(Slew Rate of LVD)
Low level detect voltage for
back-up mode
Low level detect voltage for
flag indicator
NOTE: The voltage gap between LVD and LVD FLAG is 250mV.
= – 25 °C to + 85 °C)
(T
A
Parameter
Data retention supply
voltage
Data retention supply
current
17-4
Table 17-2. D.C. Electrical Characteristics (Continued)
= 1.7 V to 3.6 V)
DD
Conditions
I
Operating Mode
DD1
V
= 3.6 V
DD
4 MHz crystal
I
Idle Mode
DD2
V
=3.6 V
DD
4 MHz crystal
I
Stop Mode
DD3
LVD OFF, V
DD
Stop Mode
LVD ON, V
DD
Table 17-3. Characteristics of Low Voltage Detect Circuit
Symbol
∆V
LVD
LVD_FLAG
Table 17-4. Data Retention Supply Voltage in Stop Mode
Symbol
V
DDDR
I
V
DDDR
Stop Mode
Min
= 3.6 V
= 3.6 V
Conditions
Conditions
= 1.5 V
DDDR
Typ
Max
5
9
1.0
2.5
1
6
10
20
Min
Typ
Max
100
300
1.7
1.9
2.1
1.95
2.15
2.35
Min
Typ
Max
1.5
3.6
1
S3F80JB
Unit
mA
uA
Unit
mV
V
V
Unit
V
µA

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