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S3F80JB
Minimun Instruction
Clock
2 MHz
1.5MHz
1MHz
500 kHz
250 kHz
1kHz
Minimun Instruction Clock = 1/4n x oscillator frequency (n = 1, 2, 8, or 16)
A: 1.95 V, 8 MHz
Table 18-10. AC Electrical Characteristics for Internal Flash ROM
= –25 °C to + 85 °C)
(T
A
Parameter
Flash Erase/Write/Read Voltage
(1)
Programming Time
(2)
Sector Erasing Time
(3)
Chip Erasing Time
Data Access Time
Number of Writing/Erasing
Data Retention
1.
The programming time is the time during which one byte (8-bit) is programmed.
2.
The Sector erasing time is the time during which all 128-bytes of one sector block is erased.
3.
In the case of S3F80JB, the chip erasing is available in Tool Program Mode only.
A
1
2
3
4
Supply Voltage (V)
Figure 18-12. Operating Voltage Range of S3F80JB
Symbol
Conditions
Fewrv
Ftp
Ftp1
Ftp2
Ft
V
RS
DD
FNwe
Ftdr
f
OSC
(Main Oscillator Frequency)
8 MHz
6 MHz
4 MHz
2 MHz
1 MHz
400 kHz
6
7
5
Min
V
1.95
DD
32
10
50
= 2.0 V
–
–
10,000
–
10
ELECTRICAL DATA (8MHz)
Typ
Max
3.3
3.6
–
60
–
20
–
100
250
–
–
–
Times
–
–
Unit
V
µS
mS
mS
nS
Years
18-13
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