External Memory Interface (Emif) - Siemens Ertec 400 Manual

Enhanced real-time ethernet controller
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6

External Memory Interface (EMIF)

In order to access an external memory area, an External Memory Interface is incorporated in the ERTEC 400.
The interface contains one SDRAM memory controller and one SRAM memory control each for asynchronous
memory. Both interfaces can be assigned separately as active interfaces. That is, the data bus is driven actively
to High at the end of each access. The internal pull-ups keep the data bus actively at High. External pull-ups are
not required. When writing, this occurs after the end of the strobe phase. When reading, this occurs after a
specified time has elapsed after the end of the strobe phase to avoid driving against the externally read block. For
the SDRAM controller, this time is equivalent to one AHB bus cycle. For the asynchronous controller, the time is
equivalent to the time required for the hold phase to elapse, which corresponds to the time from the rising edge of
RD_N to the rising edge of the chip select signal. By default, the active interface is switched on.
The following signal pins are available for the EMIF on the ERTEC 400.
Data bus
Address bus
Memory CS
Byte enable
RD/WR Async.
Ready
DIR
SDRAM
The SDRAM controller has the following features:
16-bit or 32-bit data bus width can be assigned
PC100 SDRAM-compatible (50 MHz clock frequency)
A maximum of 256 Mbytes of SDRAM for 32-bit data bus width, or
A maximum of 128 Mbytes of SDRAM for 16-bit data bus width
Supports various SDRAMs with the following properties:
CAS latency 2 or 3 clock cycles
o
1/2/4 internal banks can be addressed
o
8/9/10/11 bits column address
o
Maximum of 13 row addresses
o
SDRAMS with a maximum of 4 banks are supported. The SDRAM controller can keep all 4 banks open
simultaneously. In terms of addresses, these four banks correspond to one quarter of the SDRAM address area
on the AHB bus. As long as the alternating accesses are in the respective page, no page miss can occur.
The asynchronous memory controller has the following features:
8-bit, 16-bit, or 32-bit data bus width can be assigned
4 chip selects
Maximum of 16 Mbytes per chip select can be addressed
Different timing can be assigned for each chip select
Ready signal can be assigned differently for each chip select
Chip select CS_PER0_N can be used for a BOOT operation from external memory
Data bus width of the external memory for a BOOT operation is selected via the BOOT[2:0] input pins
Default setting "Slow timing" for BOOT operation
Timeout monitoring can be assigned
Supports the following asynchronous blocks
SRAM
o
Flash PROM
o
External I/O blocks
o
Copyright © Siemens AG 2010. All rights reserved.
Technical data subject to change
32 bit
D[31 : 0]
24 bit
A[23 : 0]
CS_PER0_N - CS_PER3_N
4
BE0_DQM0_N – BE3_DQM3_N
4
2
RD_N/WR_N
1
RDY_PER_N
2
DTR_N/OE_DRIVER_N
5
CLK_SDRAM/CS_SDRAM_N/RAS_SDRAM_N/
CAS_SDRAM_N/WE_SDRAM_N
(A1 : 0)
(A13, 11:2)
(A14 : 2)
Page
69
ERTEC 400 Manual
Version 1.2.2

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