Processor Asynchronous Sideband Dc Specifications - Intel Xeon Processor E5-1600 Datasheet

Table 7-21. Serial VID Interface (SVID) DC Specifications (Sheet 2 of 2)
Symbol
R Buffer On Resistance
ON
Signals SVIDCLK, SVIDDATA
I Input Leakage Current
IL
Signals SVIDCLK, SVIDDATA
I Input Leakage Current
IL
Signal SVIDALERT_N
Notes:
1. V refers to instantaneous V
TT
2. Measured at 0.31*V
TT
3. Vin between 0V and V
TT
4. Refer to the appropriate Platform Design Guide (PDG) for routing design guidelines.
Table 7-22. Processor Asynchronous Sideband DC Specifications
Symbol
Input Edge Rate
Signals: CAT_ERR_N, MEM_HOT_C{01/23}_N,
PMSYNC, PROCHOT_N, PWRGOOD, RESET_N
CMOS1.05v Signals
V Input Low Voltage
IL_CMOS1.05v
V Input High Voltage
IH_CMOS1.05v
V Input Low Voltage
IL_MAX
Signal PWRGOOD
V Input High Voltage
IH_MIN
Signal PWRGOOD
V Output Low Voltage
OL_CMOS1.05v
V Output High Voltage
OH_CMOS1.05v
I Input Leakage Current
IL_CMOS1.05v
I Output Current
O_CMOS1.05v
(R = 500 ohm)
TEST
A Non-Monotonicity Amplitude, Rising Edge
NM_Rise
Signal PWRGOOD
A Non-Monotonicity Amplitude, Falling Edge
NM_Fall
Signal PWRGOOD
Open Drain CMOS (ODCMOS) Signals
V Input Low Voltage
IL_ODCMOS
V Input High Voltage
IH_ODCMOS
V Output High Voltage
OH_ODCMOS
Signals: CAT_ERR_N, ERROR_N[2:0],
THERMTRIP_N, PROCHOT_N, CPU_ONLY_RESET
I Output Leakage Current,
OL
Signal MEM_HOT_C{01/23}_N
I Output Leakage Current
OL
(R = 50 ohm)
TEST
R Buffer On Resistance
ON
Signals: CAT_ERR_N, CPU_ONLY_RESET,
ERROR_N[2:0], MEM_HOT_C{01/23}_N,
PROCHOT_N, THERMTRIP_N
Notes:
180
Parameter
.
TT
Parameter
Min Typ
Min
0.05
0.3*V
0.7*V
TT
0.320
0.640
0.12*V
0.88*V
TT
±1.50
0.135
0.165
0.3*V
0.7*V
TT
V
Intel® Xeon® Processor E5-1600/E5-2600/E5-4600 Product Families
Max Units
14
±900 A
±500 A
Max Units Notes
V/ns
V
TT
V
V 1,2,5,
V 1,2,5
V
TT
V
±50 mA
mA
V
V
V
TT
V
V
TT(max)
±100 mA
±900 mA
14 W
Datasheet Volume One
Notes
2
3,4
3,4
4,5
1,2
1,2
1,2
1,2
1,2
1,2
5
5
1,2
1,2
1,2
3
3
1,2