Processor Asynchronous Sideband Dc Specifications - Intel BX80619I73960X Datasheet

Table 7-18. Processor Asynchronous Sideband DC Specifications
Symbol
CMOS1.05 V Signals
V
IL_CMOS1.05v
V
IH_CMOS1.05v
V
IL_MAX
V
IH_MIN
V
OL_CMOS1.05v
V
OH_CMOS1.05v
I
IL_CMOS1.05v
I
O_CMOS1.05v
A
NM_Rise
A
NM_Fall
Open Drain CMOS (ODCMOS) Signals
V
IL_ODCMOS
V
IH_ODCMOS
V
OH_ODCMOS
I
OL
I
OL
R
ON
Note:
1. This table applies to the miscellaneous signals specified in
2. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
3. For Vin between 0 and V
4. PWRGOOD Non Monotonicity duration (T
5. These are measured between V
68
Parameter
Input Edge Rate
Signals: CAT_ERR_N,
MEM_HOT_C{01/23}_N, PMSYNC,
PROCHOT_N, PWRGOOD, RESET_N
Input Low Voltage
Input High Voltage
Input Low Voltage
Signal PWRGOOD
Input High Voltage
Signal PWRGOOD
Output Low Voltage
Output High Voltage
Input Leakage Current
Output Current
(R = 500 ohm)
TEST
Non-Monotonicity Amplitude, Rising Edge
Signal PWRGOOD
Non-Monotonicity Amplitude, Falling Edge
Signal PWRGOOD
Input Low Voltage
Input High Voltage
Output High Voltage, Signals CAT_ERR_N,
ERROR_N[2:0], THERMTRIP_N,
PROCHOT_N, CPU_ONLY_RESET
Output Leakage Current,
Signal: MEM_HOT_C{01/23}_N
Output Leakage Current
(R = 50 ohm)
TEST
Buffer On Resistance, Signals: CAT_ERR_N,
CPU_ONLY_RESET, ERROR_N[2:0],
MEM_HOT_C{01/23}_N,
PROCHOT_N, THERMTRIP_N
.
OH
) time is maximum 1.3 ns.
NM
and V and the edge must be monotonic.
IL IH
Electrical Specifications
Min Max
0.05 —
— 0.3*V
TT
0.7*V
TT
— 0.320
0.640 —
— 0.12*V
TT
0.88*V —
TT
-50 +50
-1.50 +1.50
— 0.135
— 0.165
— 0.3*V
TT
0.7*V —
TT
— V
TT(max)
-100 +100
— +900
— 14
Table 7-5.
Datasheet, Volume 1
Units Notes
V/ns 5
V 1,2
V 1,2
V 1,2,4
V 1,2,4
V 1,2
V 1,2
μA 1,2
mA 1,2
V 4
V 4
V 1,2
V 1,2
V 1,2
μA 3
3
μA
1,2
Ω