STM32F042xx
6.3.10
Memory characteristics
Flash memory
The characteristics are given at T
Symbol
t
prog
t
ERASE
t
ME
I
DD
1. Guaranteed by design, not tested in production.
Symbol
N
END
t
RET
1. Data based on characterization results, not tested in production.
2. Cycling performed over the whole temperature range.
6.3.11
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
SS
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in
defined in application note AN1709.
Table 43. Flash memory characteristics
Parameter
16-bit programming time T
Page (1 KB) erase time
Mass erase time
Supply current
Table 44. Flash memory endurance and data retention
Parameter
Endurance
T
A
1 kcycle
Data retention
1 kcycle
10 kcycles
through a 100 pF capacitor, until a functional disturbance occurs. This test is
Table
DocID025832 Rev 2
= –40 to 105 °C unless otherwise specified.
A
Conditions
–40 to +105 °C
A
–40 to +105 °C
T
A
–40 to +105 °C
T
A
Write mode
Erase mode
Conditions
= –40 to +105 °C
(2)
at T
= 85 °C
A
(2)
at T
= 105 °C
A
(2)
at T
= 55 °C
A
45. They are based on the EMS levels and classes
Electrical characteristics
(1)
Min
Typ
Max
40
53.5
60
20
-
40
20
-
40
-
-
10
-
-
12
(1)
Min
Unit
kcycles
10
30
10
Years
20
DD
Unit
μs
ms
ms
mA
mA
and
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