Emc Characteristics; Table 44. Flash Memory Endurance And Data Retention; Table 45. Ems Characteristics - STMicroelectronics STM32F042F4 Manual

Arm-based 32-bit mcu, up to 32 kb flash, crystal-less usb fs 2.0, can, 9 timers, adc and comm. interfaces, 2.0 - 3.6 v
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STM32F042x4 STM32F042x6
Symbol
N
END
t
RET
1. Data based on characterization results, not tested in production.
2. Cycling performed over the whole temperature range.
6.3.11

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
SS
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in
defined in application note AN1709.
Symbol
V
FESD
V
EFTB
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.

Table 44. Flash memory endurance and data retention

Parameter
Endurance
T
A
1 kcycle
Data retention
1 kcycle
10 kcycle
through a 100 pF capacitor, until a functional disturbance occurs. This test is
Table

Table 45. EMS characteristics

Parameter
Voltage limits to be applied on any I/O pin
to induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
pins to induce a functional disturbance
DocID025832 Rev 5
Conditions
= –40 to +105 °C
(2)
at T
= 85 °C
A
(2)
at T
= 105 °C
A
(2)
at T
= 55 °C
A
45. They are based on the EMS levels and classes
V
= 3.3 V, LQFP48, T
DD
f
HCLK
conforming to IEC 61000-4-2
V
= 3.3 V, LQFP48, T
DD
and V
f
DD
SS
HCLK
conforming to IEC 61000-4-4
Electrical characteristics
Min
10
30
10
20
Conditions
= +25 °C,
A
= 48 MHz,
= +25°C,
A
= 48 MHz,
(1)
Unit
kcycle
Year
and
DD
Level/
Class
3B
4B
69/117
89

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