NEC 78K0S/KA1+ User Manual page 354

CHAPTER 21 ELECTRICAL SPECIFICATIONS (TARGET VALUES) ((T2) product)
Flash Memory Programming Characteristics (T
Parameter Symbol
Supply current I
DD
Note 1
Erasure count N
(per 1 block)
Chip erase time T
Block erase time T
Byte write time T
Internal verify T
Blank check T
Total loss P
Retention years
Note 1. Depending on the erasure count (N
erase time parameters.
2. When the average temperature when operating and not operating is 85°C.
Remark When a product is first written after shipment, "erase → write" and "write only" are both taken as one rewrite.
(Notes 3 is listed on the next page.)
354
= –40 to +105°C, 2.7 V ≤ V
A
Conditions
V = 5.5 V
DD
= −40 to +105°C
T
ERASE A
T = −10 to +105°C,
CERASE A
≤ 100
N
ERASE
= −10 to +105°C,
T
A
≤ 1000
N
ERASE
T = −40 to +105°C,
A
≤ 100
N
ERASE
= −40 to +105°C,
T
A
≤ 1000
N
ERASE
T = −10 to +105°C,
BERASE A
N ≤ 100
ERASE
= −10 to +105°C,
T
A
≤ 1000
N
ERASE
= −40 to +105°C,
T
A
N ≤ 100
ERASE
T = −40 to +105°C,
A
≤ 1000
N
ERASE
= −40 to +105°C, N
T
WRITE A
Per 1 block
VERIFY
Per 1 byte
Per 1 block
BLKCHK
Note 3
= −40 to +105°C
T
T A
Note 2
T = 85°C , N
A ERASE
), the erase time varies. Refer to the chip erase time and block
ERASE
User's Manual U16898EJ3V0UD
DD
4.5 V ≤ V ≤ 5.5 V
DD
3.5 V ≤ V
< 4.5 V
DD
2.7 V ≤ V
< 3.5 V
DD
4.5 V ≤ V ≤ 5.5 V
DD
3.5 V ≤ V
< 4.5 V
DD
2.7 V ≤ V < 3.5 V
DD
4.5 V ≤ V ≤ 5.5 V
DD
3.5 V ≤ V < 4.5 V
DD
2.7 V ≤ V
< 3.5 V
DD
4.5 V ≤ V ≤ 5.5 V
DD
3.5 V ≤ V
< 4.5 V
DD
2.7 V ≤ V < 3.5 V
DD
4.5 V ≤ V ≤ 5.5 V
DD
3.5 V ≤ V < 4.5 V
DD
2.7 V ≤ V
< 3.5 V
DD
4.5 V ≤ V ≤ 5.5 V
DD
3.5 V ≤ V
< 4.5 V
DD
2.7 V ≤ V
< 3.5 V
DD
4.5 V ≤ V ≤ 5.5 V
DD
3.5 V ≤ V < 4.5 V
DD
2.7 V ≤ V < 3.5 V
DD
4.5 V ≤ V ≤ 5.5 V
DD
3.5 V ≤ V
< 4.5 V
DD
2.7 V ≤ V
< 3.5 V
DD
≤ 1000
ERASE
≤ 1000
−
(T2) product T = 40 to
A
≤ 5.5 V, V = 0 V)
SS
MIN. TYP. MAX.
7.0
1000
0.8
1.0
1.2
4.8
5.2
6.1
1.6
1.8
2.0
9.1
10.1
12.3
0.4
0.5
0.6
2.6
2.8
3.3
0.9
1.0
1.1
4.9
5.4
6.6
150
6.8
27
480
120
10
°C
+
125
Unit
mA
Times
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
µ
s
ms
µ
s
µ
s
mW
Years