Electrical Characteristics; Absolute Maximum Specifications; Table 7.1. Absolute Maximum Ratings - Silicon Laboratories C8051T620 Manual

C8051T620/1/6/7 & C8051T320/1/2/3

7. Electrical Characteristics

7.1. Absolute Maximum Specifications

Table 7.1. Absolute Maximum Ratings

Parameters
Ambient temperature under bias
Storage Temperature
Voltage on RST or any Port I/O
Pin (except V during program-
PP
ming) with respect to GND
Voltage on V with respect to
PP
GND during a programming oper-
ation
Duration of High-voltage on V
pin (cumulative)
Voltage on V with respect to
DD
GND
Maximum Total current through
V , V , REGIN, or GND
DD IO
Maximum output current sunk by
RST or any Port pin
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the devices at those or any other conditions above
those indicated in the operation listings of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
34
Test Condition
V > 2.2 V
DD
V < 2.2 V
DD
V > 2.4 V
DD
V > 3.6 V and In-Applica-
PP
PP
tion Programming enabled
or a non-zero value written
to EPCTL
Regulator1 in Normal Mode
Regulator1 in Bypass Mode
Rev. 1.2
Min Typ Max
–55 — 125
–65 — 150
–0.3 — 5.8
–0.3 — V + 3.6
DD
–0.3 — 7.0
10
–0.3 — 4.2
–0.3 — 1.98
— — 500
— — 100
Unit
°C
°C
V
V
V
s
V
V
mA
mA