Flashdisturb Tests - Keithley 4200-SCS User Manual

Model 4200-SCS User's Manual
8.
9.
10.
The following three projects are similar, and use the shared stress-measure
looping capability of the FlashEndurance projects:
• FlashDisturb-NAND project
• FlashDisturb-NOR project
• FlashDisturb-switch project
The purpose of the Disturb test is to pulse stress a device in an array test
structure, then perform a measurement, such as V
pulsed device.
The goal is to measure the amount of V
programmed or erased states, when a nearby device is pulsed with either a
Program, Erase, or Program+Erase waveforms.
The typical measurement is a V
of DC test may be configured.
The difference between the FlashDisturb-NAND and FlashDisturb-NOR are the
typical pulse widths and levels specific to the DUT type. The FlashDisturb-switch
is a generic example of the Flash testing described above, but adds support for an
external Keithley switch matrix.

FlashDisturb tests

The FlashDisturb tests consists of the following tests:
• Program
• SetupDC-Program
• Vt-MaxGm-Program
• Erase
• SetupDC-Erase
• Vt-MaxGm-Erase
The six tests listed above are the same ones used for endurance testing (see
FlashEndurance-NAND tests
Stressing for the disturb tests are configured from the subsite setup tab for a
disturb project subsite plan. The default subsite setup for FlashDisturb-NAND
(shown in
file using Kpulse, to perform log stressing that ranges from 100,000 to 1,000,000
counts.
4200-900-01 Rev. K / February 2017
Before running the test for the first time, it is recommended to try out the project on a scrap
device:
a) Ensure that the project navigator is showing the FlashEndurance entry highlighted,
as shown in Figure
b) Click the Run Test/Subsite button (in the red oval on
c) Ensure that the test cycles through each test in the project navigator, and that data
is input into the Subsite Data tab.
Move to a fresh device and click the Run Test/Subsite icon.
If errors or unexpected operation occurs, see the
Figure 3-122) uses Segment ARB
Return to
Section 3: Common Device Characterization Tests
3-113.
shift in adjacent cells, either in the
T
extraction based on a Vg-Id sweep, but any type
T
for details).
®
Section Topics
Figure 3-113).
Error codes and Troubleshooting
, on a device adjacent to the
T
waveforms, defined and saved to
sections.
3-149