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CHAPTER 22 ELECTRICAL SPECIFICATIONS (
Flash Memory Writing and Erasing Characteristics (T
µ
(
PD78F9488, 78F9489 only)
Parameter
Write/erase operating frequency
Note
Write current (V
pin)
DD
Note
Write current (V
pin)
PP
Note
Erase current (V
pin)
DD
Note
Erase current (V
pin)
PP
Unit erase time
Total erase time
Number of overwrites
V
supply voltage
PP
Note Excludes current flowing through ports (including on-chip pull-up resistors)
µ
= 10 to 40°C, V
A
Symbol
Conditions
f
2.7 V ≤ V
≤ 5.5 V
X
DD
1.8 V ≤ V
≤ 5.5 V
DD
I
When V
supply voltage = V
DDW
PP
(at 5.0 MHz operation)
I
When V
supply voltage = V
PPW
PP
I
When V
supply voltage = V
DDE
PP
(at 5.0 MHz operation)
I
When V
supply voltage = V
PPE
PP
t
er
t
era
Erase and write is considered as 1
cycle
V
Normal operation
PP0
V
Flash memory programming
PP1
User's Manual U15331EJ4V1UD
PD789488, 78F9488, 789489, 78F9489)
= 1.8 to 5.5 V)
DD
MIN.
1.0
1.0
PP1
PP1
PP1
PP1
0.5
0
9.7
TYP.
MAX.
Unit
5
MHz
1.25
MHz
7
mA
13
mA
7
mA
100
mA
1
1
s
20
s
20
Times
0.2V
V
DD
10.0
10.3
V
361
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