Memory Subsystem - ECS NEATSX User Manual

Memory Subsystem

This section covers types of memory applicable to the
NEATsx and the structure of the memory subsystem.
The NEATsx can have up to eight megabytes of memory in­
stalled on the mainboard. A number of different kinds of memory
chips or modules can be used. All of the memory on the mainboard
uses a 16-bit data path to connect to the microprocessor.
There are four memory banks on the NEATsx main board.
Two of these receive DIP DRAMs. The other two are for SIP memory
modules. Using jumper JP6 you can designate whether the SIP mod­
ules or the DIP DRAMs should be banks zero and one. If you intend
to use DIP DRAMs, those sections of the memory subsystem must be
defined as banks zero and one. The other two SIP banks would then be
banks two and three. It's not necessary, however, that these two SIP
banks be utilized. The point is that if you do use both DRAM chips
and SIP modules, it is the DRAM chips that must be designated as
banks zero and one.
If, however, only SIP modules will be used on the NEATsx
main board, then those must be defined as banks zero and one. Jumper
JP6 is for designating bank numbers. The physical banks obviously do
not change. The only change is in bank designations.
Hardware Specifications
9