Electrical Sensitivity Characteristics; I/O Current Injection Characteristics; Table 42. Esd Absolute Maximum Ratings; Table 43. Electrical Sensitivities - STMicroelectronics STM32F050G6 Manual

Electrical characteristics
6.3.11

Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 42.
Symbol
V
ESD(HBM)
V
ESD(CDM)
1. Data based on characterization results, not tested in production.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
●
A supply overvoltage is applied to each power supply pin
●
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 43.
Symbol
LU
6.3.12

I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below V
above V
DD
operation. However, in order to give an indication of the robustness of the microcontroller in
cases when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into the
I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (>5
LSB TUE), out of conventional limits of current injection on adjacent pins (lower than
or lower than  10 µA), or other functional failure (for example reset, oscillator frequency
deviation).
62/98
ESD absolute maximum ratings
Ratings
Electrostatic discharge
voltage (human body model)
Electrostatic discharge
voltage (charge device model)
Electrical sensitivities
Parameter
Static latch-up class
(for standard, 3 V-capable I/O pins) should be avoided during normal product
Doc ID 023079 Rev 3
Conditions
+25 °C, conforming
T
A
to JESD22-A114
+25 °C, conforming
T
A
to JESD22-C101
Conditions
+105 °C conforming to JESD78A
T
A
STM32F050xx
Class Maximum value
2 2000
II 500
Class
II level A
SS
(1)
Unit
V
or
5 µA
–