STMicroelectronics STM32F050G6 Manual page 58

Electrical characteristics
High-speed internal 14 MHz (HSI14) RC oscillator (dedicated to ADC)
Table 34.
Symbol
f
HSI14
TRIM
DuCy
(HSI14)
ACC
HSI14
t
su(HSI14)
I
DDA(HSI14)
1. V = 3.3 V, T
DDA
2. Guaranteed by design, not tested in production.
3. Data based on characterization results, not tested in production.
Low-speed internal (LSI) RC oscillator
Table 35.
Symbol
f
LSI
(2)
t
su(LSI)
I
DDA(LSI)
V
1.
DDA
2. Guaranteed by design, not tested in production.
Wakeup time from low-power mode
The wakeup times given in
oscillator. The event used to wake up the device depends from the current operating mode:
● Stop or sleep mode: the wakeup event is WFE
●
The wakeup pin used in stop and sleep mode is PA0and in standby mode is the PA1.
All timings are derived from tests performed under ambient temperature and V
voltage conditions summarized in
58/98
HSI14 oscillator characteristics
Parameter
Frequency
HSI14 user-trimming step
Duty cycle
Accuracy of the HSI14
oscillator (factory calibrated)
HSI14 oscillator startup time
HSI14 oscillator power
consumption
= –40 to 105 °C unless otherwise specified.
A
LSI oscillator characteristics
Parameter
Frequency
LSI oscillator startup time
(2)
LSI oscillator power consumption
= 3.3 V
, T = –40 to 105 °C unless otherwise specified.
A
Table 36
Doc ID 023079 Rev 3
(1)
Conditions
T = –40 to 105 °C –4.2
A
T = –10 to 85 °C
A
T = 0 to 70 °C
A
T = 25 °C
A
(1)
Min
30
-
-
is measured on a wakeup phase with a 8-MHz HSI RC
Table 15.
STM32F050xx
Min Typ Max
- 14
(2)
- - 1
(2) (2)
45 - 55
(3) (3)
- 5.1
(3) (3)
–3.2 - 3.1
(3) (3)
–1.3 - 2.2
–1 - 1
(2) (2)
1 - 2
(2)
- 100 150
Typ Max
40 50
- 85
0.75 1.2
supply
DD
Unit
MHz
%
%
%
%
%
%
µs
µA
Unit
kHz
µs
µA