Electrical characteristics
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher
than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out
of the -5 μA/+0 μA range) or other functional failure (for example reset occurrence or
oscillator frequency deviation).
The characterization results are given in
Negative induced leakage current is caused by negative injection and positive induced
leakage current is caused by positive injection.
Symbol
I
INJ
6.3.14
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in
performed under the conditions summarized in
I/Os are designed as CMOS- and TTL-compliant.
Symbol
Parameter
Low level input
V
IL
voltage
High level input
V
IH
voltage
Schmitt trigger
V
hys
hysteresis
76/117
Table 49. I/O current injection susceptibility
Description
Injected current on PA12 pin
Injected current on PA9, PB3, PB13, PF11 pins with
induced leakage current on adjacent pins less than 50 μA
Injected current on PB0, PB1 and all other FT and FTf pins
Injected current on all other TC, TTa and RST pins
Table 50. I/O static characteristics
Conditions
TC and TTa I/O
FT and FTf I/O
All I/Os
TC and TTa I/O
FT and FTf I/O
All I/Os
TC and TTa I/O
FT and FTf I/O
DocID025832 Rev 2
Table
49.
Table 50
Table 21: General operating
Min
-
-
-
(1)
0.445 V
+0.398
DDIOx
(1)
0.5 V
+0.2
DDIOx
0.7 V
DDIOx
-
-
STM32F042xx
Functional
susceptibility
Negative
Positive
injection
injection
-0
+5
-5
NA
-5
NA
-5
+5
are derived from tests
conditions. All
Typ
Max
-
0.3 V
+0.07
DDIOx
-
0.475 V
–0.2
DDIOx
-
0.3 V
DDIOx
-
-
-
-
-
-
(1)
200
-
(1)
100
-
Unit
mA
Unit
(1)
(1)
V
V
mV
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