Samsung S5PC100 User Manual page 1852

ELECTRICAL DATA
Table 12.1- 13 Memory Port 1 Interface Timing Constants (LPDDR1 SDRAM)
(VDD_INTNT= 1.2V± 0.05V, TA = -40 to 85°C, VDDm1 = 1.7V – 1.9V)
Parameter
DDR SDRAM Address Delay
DDR SDRAM Chip Select Delay
DDR SDRAM Row active Delay
DDR SDRAM Column active Delay
DDR SDRAM Byte Enable Delay
DDR SDRAM Write enable Delay
DDR SDRAM Output data access time from CK
DDR SDRAM Row Precharge time
DDR SDRAM RAS to CAS delay
DDR SDRAM Write recovery time
DDR SDRAM Clock low level width
DDR SDRAM Read Preamble
DDR SDRAM Read Postamble
DDR SDRAM Write Postamble time
DDR SDRAM Clock to valid DQS-In
DDR SDRAM DQS-In Setup time
DDR SDRAM DQS-In Hold time
DDR SDRAM DQS-In high level width
DDR SDRAM DQS-In low level width
DDR SDRAM read Data Setup time
Load Capacitance
12.1-20
Xm1*
S5PC100 USER'S MANUAL (REV1.0)
Symbol Min
2.86
SAD
t
2.75
SCSD
t
2.86
SRD
t
2.85
SCD
t
2.87
SBED
t
2.86
SWD
t
2.00
SAC
t
18.00
RP
t
18.00
RCD
t
WR 12.00
t
0.45
CL
t
0.90
RPRE
t
0.40
RPST
t
0.40
WPST
t
0.75
DQSS
t
1.30
WPRES
t
WPREH 1.30
t
0.35
DQSH
t
DQSL 0.35
t
-
DDS
t
Max
3.73
2.95
3.61
3.50
3.46
3.62
5.50
-
-
-
0.55
1.10
0.60
0.60
1.25
-
-
0.60
0.60
0.50
< 15pF
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tCK
tCK
tCK
tCK
tCK
ns
ns
tCK
tCK
ns